2sk3933-01l Fuji Electric holdings CO.,Ltd, 2sk3933-01l Datasheet
2sk3933-01l
Manufacturer Part Number
2sk3933-01l
Description
N-channel Silicon Power Mosfet
Manufacturer
Fuji Electric holdings CO.,Ltd
Datasheet
1.2SK3933-01L.pdf
(4 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SK3933-01L
Manufacturer:
FUJITSU
Quantity:
12 500
www.fujielectric.co.jp/fdt/scd
2SK3933-01L,S,SJ
Super FAP-G Series
N-CHANNEL SILICON POWER MOSFET
FUJI POWER MOSFET
Drain-source voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Maximum Avalanche current
Non-Repetitive
Maximum Avalanche Energy
Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. Power Dissipation
Operating and Storage
Temperature range
Item
Item
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time t
Turn-Off Time t
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Zero Gate Voltage Drain Current
Thermal resistance
Features
Item
Thermal characteristics
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Electrical characteristics (T
High speed switching
No secondary breakdown
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
on
off
c
=25°C unless otherwise specified)
V
V
I
I
V
I
E
E
dV
dV/dt
P
T
T
D
D(puls]
AR
AS
AR
D
ch
stg
DS
DSX
GS
Symbol
DS
Low on-resistance
DC-DC converters
R
R
Symbol
Symbol
BV
V
I
R
g
C
C
C
td
t
td
t
Q
Q
Q
V
t
Q
/dt
I
Low driving power
GSS
th(ch-a)
r
f
rr
th(ch-c)
DSS
fs
GS(th)
DS(on)
oss
iss
rss
G
GS
GD
SD
(on)
(off)
rr
DSS
-55 to +150
+150
Ratings
500
500
±44
±30
453.9
165
11
11
16.5
20
5
1.67
Test Conditions
V
V
R
Test Conditions
I
I
V
V
f=1MH
V
I
V
I
I
-di/dt=100A/µs
V
V
V
I
I
channel to ambient
channel to case
D
D
D
F
F
D
D
CC
GS
GS
DS
GS
CC
GS
DS
DS
GS
=11A V
=11A V
= 250 µ A
= 250 µ A
=11A
=5.5A
=5.5A
=300V I
=10 Ω
=10V
=500V V
=400V V
=±30V
=25V
=0V
=250V
=10V
mJ
kV/µs
kV/µs
W
°C
°C
Unit
mJ
V
V
A
A
V
A
GS
GS
V
V
V
GS
DS
D
=0V T
=0V
DS
GS
GS
=5.5A
V
V
=10V
=25V
GS
DS
=0V
=0V
=0V
T
V
Note *1
Note *2
Note *3
V
Note *4
Tc=25°C
Ta=25°C
=V
=0V
ch
GS
DS
Remarks
ch
=25°C
GS
= <
=-30V
=25°C
500V
T
T
ch
ch
=25°C
=125°C
Note *1:Tch 150°C,Repetitive and Non-repetitive
Note *2:StartingTch=25°C,I
Note *3:Repetitive rating:Pulse width limited by
Note *4:I
Outline Drawings
Equivalent circuit schematic
E
See to the ‘Avalanche Energy’ graph
and Avalanche current.
graph.
See to the ‘Transient Thermal impedance’
V
maximum channel temperature.
F
AS
CC
= <
Min.
Min.
-I
limited by maximum channel temperature
= <
=50V,R
Gate(G)
500
D
, -di/dt=50A/
3.0
4.5
See to P4
G
=50Ω
Typ.
Typ.
950
130
650
10
16
33
25
10
0.57
9.0
6.0
6.0
5.5
8.0
1.10
5.5
AS
µ
s,V
=4.4A,L=43mH,
CC
Source(S)
Drain(D)
1425
= <
Max.
75
Max.
250
100
195
BV
0.758
25
24
50
38
15
12
(mm)
5.0
0.70
9.0
9.0
8.3
1.50
DSS
,Tch 150°C
Units
Units
200406
°C/W
°C/W
= <
ns
V
V
µA
µA
nA
Ω
S
pF
nC
V
ns
µC
1
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2sk3933-01l Summary of contents
Page 1
... N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Super FAP-G Series Features High speed switching No secondary breakdown Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) Maximum ratings and characteristic Absolute maximum ratings (Tc=25°C unless otherwise specified) Item Symbol Drain-source voltage V DS ...
Page 2
... Characteristics Allowable Power Dissipation PD=f(Tc) 200 180 160 140 120 100 ° Typical Transfer Characteristic µ ID=f(VGS):80 s pulse test,VDS=25V,Tch=25 100 VGS[V] Typical Drain-Source on-state Resistance µ RDS(on)=f(ID):80 s pulse test,Tch=25 2.0 VGS=6.0V 6.5V 7.0V 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 ...
Page 3
... Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250 7.0 6.5 6.0 5.5 max. 5.0 4.5 4.0 3.5 min. 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 - ° Tch [ C] Typical Capacitance C=f(VDS):VGS=0V,f=1MHz VDS [V] Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG= td(off) td(on ...
Page 4
... Maximum Avalanche Current Pulsewidth I =f(t ):starting Tch= Single Pulse Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D Outline Drawings (mm) Type( ° C,Vcc=50V - ...