2sk3115b-s17-ay Renesas Electronics Corporation., 2sk3115b-s17-ay Datasheet - Page 2

• Manufacturer Part Number: 2sk3115b-s17-ay
• Description: 2sk31 Switching N-channel Power Mos Fet
• Manufacturer: Renesas Electronics Corporation.

ELECTRICAL CHARACTERISTICS (T
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
V
TEST CIRCUIT 3 GATE CHARGE
2
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate Cut-off Voltage
Forward Transfer Admittance
Drain to Source On-state Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
GS
= 20
PG.
→
0 V
PG.
Characteristics
I
G
V
= 2 mA
50
R
DD
G
Ω
D.U.T.
= 25
I
D
50
I
Ω
AS
Ω
D.U.T.
Note
Note
BV
DSS
Note
Starting T
R
V
DD
L
V
DS
L
V
Symbol
V
R
V
DD
| y
ch
C
t
t
Q
Q
I
I
C
GS(off)
C
DS(on)
d(on)
d(off)
Q
F(S-D)
Q
GSS
DSS
A
t
t
t
oss
rss
GS
GD
rr
fs
iss
r
f
G
rr
= 25°C)
|
V
V
V
V
V
V
V
f = 1 MHz
V
V
R
R
V
V
I
I
I
di/dt = 50 A/
Data Sheet D18065EJ2V0DS
D
F
F
DS
GS
DS
DS
GS
DS
GS
DD
GS
DD
GS
G
L
= 6.0 A
= 6.0 A, V
= 6.0 A, V
= 50 Ω
= 10 Ω
V
0
= 600 V, V
= 10 V, I
= 10 V, I
= 10 V
= ±30 V, V
= 10 V, I
= 0 V
= 150 V, I
= 10 V
= 450 V
= 10 V
GS
τ = 1 μs
Duty Cycle
TEST CIRCUIT 2 SWITCHING TIME
PG.
Test Conditions
GS
GS
μ
D
D
D
τ
s
D
= 1 mA
= 3.0 A
= 3.0 A
GS
DS
= 0 V
= 0 V
= 3.0 A
≤
= 0 V
= 0 V
1%
R
G
D.U.T.
R
V
MIN.
2.5
2.0
DD
L
V
Wave Form
V
Wave Form
GS
DS
TYP.
1090
1730
380
360
2.7
0.9
0.9
53
16
11
29
21
8
8
8
V
V
V
GS
DS
0
DS
0
MAX.
±100
10%
t
100
3.5
1.2
d(on)
90%
t
on
2SK3115B
10% 10%
t
Unit
r
μ
nA
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
V
Ω
V
S
A
V
t
GS
d(off)
t
off
90%
90%
t
f