si2302cds Vishay, si2302cds Datasheet
si2302cds
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si2302cds Summary of contents
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... PRODUCT SUMMARY V (V) R (Ω) DS DS(on) 0.057 4 0.075 2 Ordering Information: Si2302CDS-T1-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 ° Pulsed Drain Current Continuous Source Current (Diode Conduction) a Power Dissipation Operating Junction and Storage Temperature Range ...
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... Si2302CDS Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted A Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-Resistance a Forward Transconductance Diode Forward Voltage b Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge ...
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... Document Number: 68645 S-81007-Rev. A, 05-May-08 0.070 0.060 0.050 0.040 °C C 0.030 0.9 1 0.01 0.001 75 100 125 150 Si2302CDS Vishay Siliconix Drain Current (A) D On-Resistance vs. Drain Current 3 ...
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... Si2302CDS Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.12 0.10 0.08 0. ° Gate-to-Source Voltage (V) GS On-Resistance vs. Gate-to-Source Voltage 0.01 0.1 1 Time (s) Single Pulse Power 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...
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... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...