si2302cds Vishay, si2302cds Datasheet - Page 2
si2302cds
Manufacturer Part Number
si2302cds
Description
N-channel 20-v D-s Mosfet
Manufacturer
Vishay
Datasheet
1.SI2302CDS.pdf
(5 pages)
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Si2302CDS
Vishay Siliconix
Notes:
a. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Body Diode Reverse Recovery Charge
b
10
8
6
4
2
0
0.0
V
a
0.5
DS
Output Characteristics
a
- Drain-to-Source Voltage (V)
a
A
V
= 25 °C, unless otherwise noted
GS
= 5 thru 2 V
1.0
Symbol
R
V
I
t
t
I
I
DS(on)
V
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
Q
Q
g
R
t
t
t
DS
SD
rr
fs
gs
gd
r
f
g
rr
g
1.5
V
V
GS
GS
= 1.5 V
V
= 1 V
I
V
D
DS
DS
≅ 3.6 A, V
I
F
= 10 V, V
2.0
= 20 V, V
V
V
V
V
V
V
V
V
I
= 3.6 A, dI/dt = 100 A/µs
DD
DS
DS
V
S
DS
GS
GS
GS
DS
DS
= 0.95 A, V
Test Conditions
= 10 V, R
= V
≥ 10 V, V
= 0 V, V
= 0 V, I
= 4.5 V, I
= 2.5 V, I
= 20 V, V
f = 1.0 MHz
= 5 V, I
GEN
GS
GS
GS
, I
= 4.5 V, I
= 0 V, T
= 4.5 V, R
D
D
GS
D
GS
L
= 250 µA
D
D
= 250 µA
GS
GS
= 3.6 A
= 2.78 Ω
= 3.6 A
= 3.1 A
= ± 8 V
= 4.5 V
= 0 V
= 0 V
J
D
= 70 °C
g
= 3.6 A
= 1 Ω
10
8
6
4
2
0
0.0
T
C
0.4
= 125 °C
Min.
0.40
V
2.0
20
6
GS
Transfer Characteristics
- Gate-to-Source Voltage (V)
T
C
= 25 °C
0.8
Limits
0.045
0.056
Typ.
0.45
0.7
3.5
0.6
4.0
8.5
2.0
13
30
8
7
7
S-81007-Rev. A, 05-May-08
Document Number: 68645
1.2
± 100
0.057
0.075
Max.
0.85
T
1.2
5.5
8.0
4.0
75
15
15
45
15
15
1
C
= - 55 °C
1.6
Unit
nA
µA
nC
nC
ns
Ω
Ω
V
A
S
V
2.0