BT151S-600R NXP Semiconductors, BT151S-600R Datasheet

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BT151S-600R

Manufacturer Part Number
BT151S-600R
Description
Silicon-controlled Rectifier Datasheet Reference
Manufacturer
NXP Semiconductors
Datasheet
Philips Semiconductors
GENERAL DESCRIPTION
Passivated thyristors in a plastic
envelope,
mounting,
applications
bidirectional
capability and high thermal cycling
performance. Typical applications
include motor control, industrial and
domestic lighting, heating and static
switching.
PINNING - SOT428
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/ s.
June 1999
Thyristors
SYMBOL PARAMETER
V
I
I
I
I
dI
I
V
V
P
P
T
T
NUMBER
T(AV)
T(RMS)
TSM
2
GM
t
stg
j
DRM
GM
RGM
GM
G(AV)
T
/dt
PIN
tab
1
2
3
, V
RRM
intended
suitable
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak
on-state current
I
Repetitive rate of rise of
on-state current after
triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
temperature
Standard Alternative
2
cathode
t for fusing
anode
anode
gate
blocking
S
requiring
for
for
cathode
anode
anode
gate
use
surface
voltage
M
high
in
QUICK REFERENCE DATA
PIN CONFIGURATION
V
CONDITIONS
half sine wave; T
all conduction angles
half sine wave; T
surge
t = 10 ms
t = 8.3 ms
t = 10 ms
I
dI
over any 20 ms period
TM
SYMBOL
V
I
I
I
RRM
T(AV)
T(RMS)
TSM
G
DRM
/dt = 50 mA/ s
= 20 A; I
,
G
PARAMETER
Repetitive peak off-state
voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state
current
= 50 mA;
1
1
tab
mb
j
2
= 25 ˚C prior to
BT151S (or BT151M)-
3
103 ˚C
MIN.
-40
-
-
-
-
-
-
-
-
-
-
-
-
-
SYMBOL
-500R -650R -800R
a
500
MAX. MAX. MAX. UNIT
500R
500
100
7.5
12
1
MAX.
Product specification
650
BT151S series
100
110
125
150
7.5
0.5
12
50
50
650R
2
5
5
5
650
100
7.5
12
1
BT151M series
g
800
800R
800
100
7.5
12
Rev 1.200
k
UNIT
A/ s
A
W
W
˚C
˚C
V
A
A
A
A
A
V
V
2
V
A
A
A
s

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BT151S-600R Summary of contents

Page 1

... Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed June 1999 QUICK REFERENCE DATA SYMBOL PARAMETER in BT151S (or BT151M Repetitive peak off-state DRM V voltages RRM ...

Page 2

... DRM(max / 67 125 ˚C; D DRM(max / / 100 Product specification BT151S series BT151M series MIN. TYP. MAX. UNIT - - 1.8 K K/W MIN. TYP. MAX. UNIT - ...

Page 3

... C 1.4 1.2 1 0.8 0.6 0.4 100 150 -50 , T(RMS Product specification BT151S series BT151M series ITSM / A I TSM initial = 25 C max 1 10 100 Number of half cycles at 50Hz , versus number of cycles, for TSM sinusoidal currents Hz. IT(RMS 0.1 1 surge duration / s , versus surge duration, for sinusoidal T(RMS) currents ...

Page 4

... I (25˚C), Fig.12. Typical, critical rate of rise of off-state voltage Product specification BT151S series BT151M series typ max 0 0.1ms 1ms 10ms 0. j-mb pulse width RGK = 100 Ohms ...

Page 5

... Plastic meets UL94 V0 at 1/8". June 1999 2.38 max 1.1 6.73 max 0.93 max tab 6.22 max 10.4 max 2 0.5 min 3 1 0.8 max (x2) Fig.13. SOT428 : centre pin connected to tab. 7.0 2.15 2.5 4.57 Fig.14. SOT428 : minimum pad sizes for surface mounting . 5 Product specification BT151S series BT151M series seating plane 5.4 4 min 4.6 0.5 0.3 0.5 7.0 1.5 Rev 1.200 ...

Page 6

... Philips customers using or selling these products for use in such applications their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. June 1999 6 Product specification BT151S series BT151M series Rev 1.200 ...

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