mcr12dsm ON Semiconductor, mcr12dsm Datasheet

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mcr12dsm

Manufacturer Part Number
mcr12dsm
Description
Sensitive Gate Silicon Controlled Rectifier
Manufacturer
ON Semiconductor
Datasheet

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MCR12DSM, MCR12DSN
Sensitive Gate Silicon
Controlled Rectifiers
Reverse Blocking Thyristors
applications such as motor control; process control; temperature, light
and speed control.
Features
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 4
Peak Repetitive Off−State Voltage (Note 1)
(T
Gate Open)
On−State RMS Current
(180° Conduction Angles; T
Average On−State Current
(180° Conduction Angles; T
Peak Non-Repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T
Circuit Fusing Consideration (t = 8.3 msec)
Forward Peak Gate Power
(Pulse Width ≤ 1.0 msec, T
Forward Average Gate Power
(t = 8.3 msec, T
Forward Peak Gate Current
(Pulse Width ≤ 1.0 msec, T
Operating Junction Temperature Range
Storage Temperature Range
Designed for high volume, low cost, industrial and consumer
Small Size
Passivated Die for Reliability and Uniformity
Low Level Triggering and Holding Characteristics
Epoxy Meets UL 94 V−0 @ 0.125 in
ESD Ratings:
Pb−Free Packages are Available
J
apply for zero or negative gate voltage; however, positive gate voltage shall
not be applied concurrent with negative potential on the anode. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
= −40 to 110°C, Sine Wave, 50 to 60 Hz,
DRM
and V
RRM
C
Rating
= 75°C)
for all types can be applied on a continuous basis. Ratings
MCR12DSM
MCR12DSN
Human Body Model, 3B u 8000 V
Machine Model, C u 400 V
(T
J
C
C
= 25°C unless otherwise noted)
C
C
= 75°C)
= 75°C)
Preferred Device
= 75°C)
= 75°C)
J
= 110°C)
Symbol
I
P
V
V
T(RMS)
I
I
P
T(AV)
I
T
G(AV)
DRM,
TSM
RRM
I
GM
T
GM
stg
2
J
t
−40 to 110
−40 to 150
Value
600
800
100
7.6
5.0
0.5
2.0
12
41
1
A
Unit
2
°C
°C
W
W
V
A
A
A
A
sec
Preferred devices are recommended choices for future use
and best overall value.
1 2
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
1
2
3
3
1
2
3
4
Y
WW
R12DSx
G
ORDERING INFORMATION
4
12 AMPERES RMS
4
600 − 800 VOLTS
A
http://onsemi.com
PIN ASSIGNMENT
CASE 369C
CASE 369D
STYLE 4
STYLE 4
DPAK−3
DPAK
= Year
= Work Week
= Device Code
= Pb−Free Package
SCRs
x= M or N
Publication Order Number:
Cathode
Anode
Anode
Gate
G
DIAGRAMS
MARKING
MCR12DSM/D
K
2DSxG
YWW
R1
2DSxG
YWW
R1

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mcr12dsm Summary of contents

Page 1

... MCR12DSM, MCR12DSN Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features • Small Size • Passivated Die for Reliability and Uniformity • ...

Page 2

... Devices should not be tested with a constant current source for forward and reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. 5. Pulse Test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2 current not included in measurement. GK MCR12DSM, MCR12DSN (T = 25°C unless otherwise noted 25°C ...

Page 3

... Conduction 30° Angle 60° 1.0 2.0 3.0 4.0 5 AVERAGE ON−STATE CURRENT (AMPS) T(AV) Figure 1. Average Current Derating MCR12DSM, MCR12DSN on state RRM RRM Reverse Blocking Region (off state) Reverse Avalanche Region Anode − Conduction 10 Angle 8 30° dc 6.0 4.0 180° ...

Page 4

... T , JUNCTION TEMPERATURE (°C) J Figure 5. Typical Gate Trigger Current versus Junction Temperature 10 1.0 0.1 −40 −25 −10 5 JUNCTION TEMPERATURE (°C) J Figure 7. Typical Holding Current versus Junction Temperature MCR12DSM, MCR12DSN 1.0 = 110°C J 0.1 0.01 4.0 5.0 0.1 Figure 4. Transient Thermal Response 110 −40 −25 − ...

Page 5

... ORDERING INFORMATION Device MCR12DSMT4 MCR12DSMT4G MCR12DSN−001 MCR12DSN−001G MCR12DSNT4 MCR12DSNT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. MCR12DSM, MCR12DSN 1000 T = 25°C J 100 10 1 100 ...

Page 6

... 0.13 (0.005) M 5.80 0.228 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. MCR12DSM, MCR12DSN PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O SEATING −T− PLANE SOLDERING FOOTPRINT* 6 ...

Page 7

... Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com MCR12DSM, MCR12DSN PACKAGE DIMENSIONS DPAK−3 CASE 369D−01 ISSUE B ...

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