mcr12dsm ON Semiconductor, mcr12dsm Datasheet - Page 5

• Manufacturer Part Number: mcr12dsm
• Description: Sensitive Gate Silicon Controlled Rectifier
• Manufacturer: ON Semiconductor

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
MCR12DSMT4
MCR12DSMT4G
MCR12DSN−001
MCR12DSN−001G
MCR12DSNT4
MCR12DSNT4G
1000
100
8.0
6.0
4.0
2.0
1.0
10
10
0
100
100
Gate−Cathode Resistance and Peak Voltage
V
Figure 11. Exponential Static dv/dt versus
I
GT
PK
400 V
600 V
= 10 mA
= 800 V
Device
I
GT
Figure 9. Holding Current versus
R
R
GK
GK
= 25 mA
, GATE−CATHODE RESISTANCE (OHMS)
, GATE−CATHODE RESISTANCE (OHMS)
Gate−Cathode Resistance
1000
Package Type
(Pb−Free)
(Pb−Free)
(Pb−Free)
DPAK−3
DPAK−3
MCR12DSM, MCR12DSN
DPAK
DPAK
DPAK
DPAK
T
J
T
J
= 110°C
= 25°C
http://onsemi.com
1000
10 K
5
1000
1000
100
100
1.0
1.0
10
10
100
100
Package
Gate−Cathode Resistance and Gate Trigger
Figure 12. Exponential Static dv/dt versus
369C
369C
369D
369D
369C
369C
Figure 10. Exponential Static dv/dt versus
I
I
GT
GT
Gate−Cathode Resistance and Junction
= 25 mA
= 10 mA
R
R
GK
GK
, GATE−CATHODE RESISTANCE (OHMS)
, GATE−CATHODE RESISTANCE (OHMS)
Current Sensitivity
T
J
70°C
90°C
= 110°C
Temperature
2500 / Tape & Reel
2500 / Tape & Reel
2500 / Tape & Reel
2500 / Tape & Reel
75 Units / Rail
75 Units / Rail
Shipping
V
T
†
D
J
= 110°C
= 800 V
1000
1000