t431616a TM Technology Inc., t431616a Datasheet - Page 19

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t431616a

Manufacturer Part Number
t431616a
Description
1m X 16 Sdram - Taiwan Memory Technology
Manufacturer
TM Technology Inc.
Datasheet

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Page Read Cycle at Different Bank @ Burst Length = 4
*Note : 1. CS can be don’t cared when RAS , CAS and WE are high at the clock high going edge.
Taiwan Memory Technology, Inc. reserves the right P.19
to change products or specifications without notice.
tm
D Q
C L O C K
A 1 0 / A P
A D D R
C K E
R A S
C A S
D Q M
C L = 2
C L = 3
C S
B A
W E
2. To interrupt a burst resd by row precharge, both the read and the precharge banks must be the same.
* N o t e 1
0
R o w A c t i v e
( A - B a n k )
CH
TE
R A a
R A a
1
2
R e a d ( A -
B a n k )
C A a
3
R o w A c t i v e
( B - B a n k )
R B b
R B b
4
Q A a 0
5
Q A a 1
Q A a 0
6
R e a d ( B -
Q A a 2
Q A a 1
C B b
B a n k )
7
Q A a 3
Q A a 2
H I G H
8
Q B b 0
Q A a 3
9
Q B b 1
Q B b 0
1 0
R e a d ( A -
Q B b 2
Q B b 1
B a n k )
C A c
1 1
Q B b 3
Q B b 2
1 2
R e a d ( B -
Q A c 0
Q B b 3
C B d
B a n k )
1 3
Q A c 1
Q A c 0
1 4
R e a d ( A -
Q B d 0
Q A c 1
C A e
B a n k )
Publication Date: DEC. 2000
1 5
Q B d 1
Q B d 0
1 6
Q B d 1
Q A e 0
1 7
P r e c h a r g e
( A - B a n k )
T431616A
* N o t e 2
Q A e 1
Q A e 0
1 8
Revision: C
Q A e 1
: D o n 't c a r e
1 9

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