t1670p Vishay, t1670p Datasheet - Page 2

• Manufacturer Part Number: t1670p
• Description: Silicon Pin Photodiode
• Manufacturer: Vishay

T1670P
Vishay Semiconductors
Notes
T
The measurements are based on samples of die which are mounted on a TO-header without resin coating
BASIC CHARACTERISTICS
T
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2
amb
amb
BASIC CHARACTERISTICS
PARAMETER
Breakdown voltage
Reverse dark current
Diode capacitance
Reverse light current
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Rise time
Fall time
MECHANICAL DIMENSIONS
PARAMETER
Length of chip edge (x-direction)
Length of chip edge (y-direction)
Sensitive area
Wafer diameter
Die height
Bond pad anode
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Fig. 1 - Diode Capacitance vs. Reverse Voltage
20094
70
60
50
40
30
20
10
0
0
V
10
R
- Reverse Voltage (V)
20
For technical questions, contact:
E
E
f = 1 MHz
V
V
SYMBOL
0
R
= 100 lx, CIE illuminant A,
= 0
V
V
x * y
= 3 V, f = 1 MHz, E = 0
TEST CONDITION
A
L
L
I
D
H
R
R
R
V
x
y
S
30
= 5 V, R
= 5 V, R
= 100 µA, E = 0
R
λ = 515 nm
λ = 515 nm
= 10 V, E = 0
V
Silicon PIN Photodiode
R
= 5 V
L
L
= 50 Ω,
= 50 Ω,
0.265
MIN.
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SYMBOL
V
λ
C
(BR)
I
I
λ
ϕ
0.5
t
t
21741
ro
ra
r
Fig. 2 - Relative Spectral Sensitivity vs. Wavelength
D
p
f
0.125 x 0.11
1.0
0.8
0.6
0.4
0.2
0.0
TYP.
0.72
0.72
0.27
0.28
100
400 500 600 700 800 900 1000 1100
MIN.
16
λ - Wavelength (nm)
390 to 800
TYP.
± 60
138
560
100
100
0.1
28
MAX.
0.295
Document Number: 81999
MAX.
Rev. 1.0, 19-May-09
2
UNIT
mm
mm
mm
mm
mm
mm
UNIT
2
2
deg
nm
nm
nA
nA
pF
ns
ns
V