tn1215-g STMicroelectronics, tn1215-g Datasheet - Page 3

• Manufacturer Part Number: tn1215-g
• Description: Silicon Controlled Rectifiers
• Manufacturer: STMicroelectronics

Fig. 1: Maximum average power dissipation ver-
sus average on-state current .
Fig. 3: Average and D.C. on-state current versus
case temperature.
Fig. 5: Relative variation of gate trigger currentand
holding current versus junction temperature.
P(W)
14
12
10
I
14
12
10
I ,I [Tj]/I ,I [Tj=25 C]
2.5
2.0
1.5
1.0
0.5
0.0
T(AV)
GT H
8
6
4
2
0
8
6
4
2
0
-40
0
0
(A)
I
-20
H
I
GT H
GT
2
25
0
=30
D.C.
=180
20
4
=60
50
Tcase( C)
I
40
T(AV)
Tj( C)
=90
6
(A)
60
=120
75
80
8
=180
100
100
10
120
D.C.
125
140
12
Fig. 2 : Correlation between maximum average
power dissipation and maximum allowable t em-
peratures (T
resistances heatsink+contact.
Fig. 4: Relative variation of thermal impedance
versus pulse duration.
Fig. 6: Non repetitive surge peak on-state current
versus number of cycles.
P(W)
14
12
10
I
160
120
K=[Zth/Rth]
1.00
0.10
0.01
TSM
8
6
4
2
0
80
40
0
0
1E-3
(A)
1
Rth=8 C/W
20
=180
1E-2
amb
40
Rth=5 C/W
Zth(j-c)
and T
10
1E-1
Number of cycles
60
Tamb( C)
Rth=3 C/W
case
tp(s)
1E+0
80
) for different thermal
Rth=0 C/W
100
100
1E+1
Zth(j-a)
Tcase ( C)
120
Tj initial=25 C
F=50Hz
TN1215-G
1E+2 5E+2
140
1000
125
110
115
120
3/5