cs86ml Fujitsu Microelectronics, Inc., cs86ml Datasheet

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cs86ml

Manufacturer Part Number
cs86ml
Description
The Cs86 Series Of 0.18 Mm Standard Cells Is A Line Of Cmos Asics Based On Higher Integration Implemented
Manufacturer
Fujitsu Microelectronics, Inc.
Datasheet
FUJITSU SEMICONDUCTOR
Semicustom
CMOS
Standard cell
CS86 Series
*1 : 2 input NAND cell (low-power type) , F/O
*2 : 2 input NAND cell (low-power type) , F/O
*3 : 2 input NAND cell (low-power type) , F/O
DESCRIPTION
The CS86 series of 0.18 m standard cells is a line of CMOS ASICs based on higher integration implemented
by introducing wiring pitch reduction technology and on I/O pad placement technology to the conventional CS81
series.
The CS86 series has three types of cell sets (CS86MN, CS86MZ, and CS86ML), covering a variety of applications,
from portable devices requiring low power consumption to image processors requiring large-scale circuitry and
high speed.The three types of cell sets can be contained on one chip, allowing those system LSIs to be imple-
mented which require low power consumption as well as high-speed operation for certain types of processing.
FEATURES
• Technology
• Supply voltage
• Junction temperature range : 40 C to 125 C
• Cell set
• Cell Specifications :
DATA SHEET
CS86MN :
CS86MZ :
CS86ML :
: 0.18 m silicon-gate CMOS, 4- to 6-layer wiring
Offers standard transistor characteristics. Designed as a library for products requiring higher
throughputs.
Offers transistor characteristics for ultra high-speed operation. Designed as a library for
products that require higher processing speeds than those provided by CS86MN.
Offers transistor charactersistics with less leak current. Designed as a library for mobile
devices and other products requiring lower power consumption.
The same chip can therefore incorporate the standard transistor cell and the ultrahigh-
speed or low-leakage process cell together.
Delay time*
Power consumption*
Leak power*
Cell set name
: 1.8 V
1
3
0.15 V (normal) to 1.1 V
2, normal load, Power supply voltage 1.8 V, Temperature
1, 4 Grid, Power supply voltage 1.8 V, Temperature
0, non load, Power supply voltage 1.8 V, Temperature
2
42.7 nW/MHz
3.922 nW
CS86MZ
70 ps
40.1 nW/MHz
0.023 nW
CS86MN
0.1 V
88 ps
38.3 nW/MHz
0.0067 nW
CS86ML
136 ps
DS06-20209-2E
25 C
(Continued)
25 C
25 C

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cs86ml Summary of contents

Page 1

... I/O pad placement technology to the conventional CS81 series. The CS86 series has three types of cell sets (CS86MN, CS86MZ, and CS86ML), covering a variety of applications, from portable devices requiring low power consumption to image processors requiring large-scale circuitry and high speed ...

Page 2

CS86 Series (Continued) • Output buffer cells with noise reduction circuits • Input buffer cells and bidirectional buffer cells with on-chip input pull-up/pull-down resistors • Buffer cells for crystal oscillation circuits • Special interfaces : SSTL2, PCI, P-CML, T-LVTTL, USB ...

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MACRO LIBRARY (Including macros being prepared) 1. Logic cells Adder AND-OR Inverter Clock Buffer Latch NAND AND NOR OR-AND Scan Flip Flop ENOR Boundary Scan Register Bus Driver 2. IP macro CPU DSP Peripheral Macro Interface macro Multimedia processing macros ...

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CS86 Series COMPILED CELLS Compiled cells are macro cells which are automatically generated with the bit/word configuration specified. The CS86 series has the following types of compiled cells. (Note that each macro is different in word/bit range depending on the ...

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Clock synchronous ROM (1 addresses : 1 R) Column type Memory capacity 16 256 to 1024 1024 K 6. Clock synchronous delay line memory (2 addresses : Column type Memory capacity ...

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CS86 Series ABSOLUTE MAXIMUM RATINGS Parameter Supply voltage Input voltage Output voltage Storage temperature Junction temperature 3 Output current* Input signal transmitting rate Output signal transmitting rate Output load capacitance Supply pin current *1 : Internal gate part in case ...

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Current value that one I/O can provide to the core Frame Source type DDI DDI DDI ...

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CS86 Series RECOMMENDED OPERATING CONDITIONS • Single power supply (V DD Parameter Supply voltage “H” level input voltage “L” level input voltage Junction temperature • Dual power supply (V 3.3 V DDE Parameter Supply voltage 1.8 V CMOS “H” level ...

Page 9

WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device’s electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within their ...

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CS86 Series ELECTRICAL CHARACTERISTICS 1. DC characteristics • Single power supply : V DD Parameter Symbol “H” level output voltage V “L” level output voltage V “H” level output V-I characteristics “L” level output V-I characteristics Input leakage current Pull ...

Page 11

Dual power supply : V 2 DDE (V DDE Parameter Symbol V OH3 “H” level output voltage V OH2 V OL3 “L” level output voltage V OL2 “H” level output V-I characteristics “L” level output V-I characteristics ...

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CS86 Series CHARACTERISTICS ( 2.0 1.0 Min Typ Max 1.8 V CMOS “H” level output (L, M type ( 2.0 1.0 Min Typ Max 1.8 V ...

Page 13

(V) OH DDE 4.0 3.0 2.0 1.0 Min Typ Max 3.3 V CMOS “H” level output (L, M type (V) OH DDE 4.0 3.0 2.0 1.0 Min Typ Max 3.3 V CMOS “H” ...

Page 14

CS86 Series INPUT/OUTPUT PIN CAPACITANCE Parameter Input pin Output pin type I/O pin type Note : Capacitance varies according to the package and the location of the pin. DESIGN METHOD The integrated ...

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PACKAGES Package QFP 176, 208, 240 TQFP 100, 120 LQFP 144, 176, 208, 256 HQFP 208, 240, 256, 304 PBGA 256, 352, 420 FBGA 112, 144, 168, 176, 192, 224, 240, 272, 288, 304, 368 FLGA 144, 176, 208, 224, ...

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CS86 Series FUJITSU LIMITED All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information, such as descriptions of function and application circuit examples, ...

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