c505ut230-s0002 Cree, Inc., c505ut230-s0002 Datasheet

no-image

c505ut230-s0002

Manufacturer Part Number
c505ut230-s0002
Description
Ultrathin? Leds
Manufacturer
Cree, Inc.
Datasheet
UltraThin™ LEDs
CxxxUT230-S0002
Cree’s UltraThin LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC
superior price/performance for blue and green LEDs. These vertically structured LED chips are small in size and
require a low forward voltage. Cree’s UT™ series chips are tested for conformity to optical and electrical specifications
and the ability to withstand 1000 V ESD. Applications include keypad backlighting where sub-miniaturization and
thinner form factors are required.
FEATURES
CxxxUT230-S0002 Chip Diagram
Top View
Small Chip – 230 x 230 x 85 μm
UT LED Performance
Low Forward Voltage
Single Wire Bond Structure
Class 2 ESD Rating
5.5 mW min. (455–475 nm) Blue
2.5 mW min. (500-510 nm) Traffic Green
2.5 mW min. (520-535 nm) Green
2.9–3.0 V Typical at 5 mA
G•SiC LED Chip
230 x 230 μm
Mesa (junction)
176 x 176 μm
Gold Bond Pad
105 μm Diameter
Subject to change without notice.
www.cree.com
Bottom View
APPLICATIONS
Mobile Phone Keypads
Audio Product Display Lighting
Mobile Appliance Keypads
Automotive Applications
SiC Substrate
Bottom Surface
150 x 150 μm
Backside
Metallization
80 x 80 μm
SiC Substrate
h = 85 μm
Anode (+)
Die Cross Section
®
substrate to deliver
Cathode (-)
InGaN


Related parts for c505ut230-s0002

c505ut230-s0002 Summary of contents

Page 1

UltraThin™ LEDs CxxxUT230-S0002 Cree’s UltraThin LEDs combine highly efficient InGaN materials with Cree’s proprietary G•SiC superior price/performance for blue and green LEDs. These vertically structured LED chips are small in size and require a low forward voltage. Cree’s UT™ series ...

Page 2

... Electrostatic Discharge Threshold (HBM) Note 2 Electrostatic Discharge Classification (MIL-STD-883E) Typical Electrical/Optical Characteristics at T Part Number Forward Voltage (V Min. C460UT230-S0002 2.7 C470UT230-S0002 2.7 C505UT230-S0002 2.7 C527UT230-S0002 2.7 Mechanical Specifications Description P-N Junction Area (μm) Top Area (μm) Bottom Area (Substrate) (μm) Chip Thickness (μm) Au Bond Pad Diameter (μm) Au Bond Pad Thickness (μ ...

Page 3

... Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc. 3 CPR3CD Rev. E C460UT230-S0002 C460UT230-0101 C460UT230-0102 455 nm 460 nm Dominant Wavelength C470UT230-S0002 C470UT230-0101 C470UT230-0102 465 nm 470 nm Dominant Wavelength C505UT230-S0002 C505UT230-0103 C505UT230-0104 C505UT230-0101 C505UT230-0102 500 nm 505 nm Dominant Wavelength C527UT230-S0002 C527UT230-0105 C527UT230-0102 525 nm 530 nm Dominant Wavelength 465 nm ...

Page 4

... If (mA) Copyright © 2004-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo and G•SiC are registered trademarks, and UltraThin and UT are trademarks of Cree, Inc. 4 CPR3CD Rev. E 12.0 8.0 4.0 0.0 -4.0 -8.0 -12.0 3.5 4 ...

Related keywords