Transistors with built-in Resistor
UNR5274
Silicon NPN epitaxial planar type
For digital circuits
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2004
• High forward current transfer ratio h
• Costs can be reduced through downsizing of the equipment and
• S-Mini type package, allowing downsizing of the equipment and
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Forward voltage
Transition frequency
reduction of the number of parts.
automatic insertion through tape packing and magazine packing
Parameter
Parameter
a
Symbol
Symbol
V
= 25°C ± 3°C
R
V
V
V
V
I
I
I
V
V
T
CE(sat)
h
CBO
V
FE
P
CEO
EBO
R
1
I
T
f
CBO
CEO
CBO
CEO
a
stg
FE
OH
OL
/R
C
T
T
j
1
F
= 25°C
2
−55 to +150
Rating
I
I
V
V
V
V
I
V
V
I
V
100
150
150
C
C
C
F
50
50
CB
CB
CE
EB
CE
CC
CC
= 100 mA
= 10 µA, I
= 2 mA, I
= 10 mA, I
SJH00047AED
= 50 V, I
= 50 V, I
= 6 V, I
= 10 V, I
= 5 V, V
= 5 V, V
= 10 V, I
B
Conditions
C
Unit
mW
mA
E
°C
°C
B
B
B
E
B
C
E
V
V
= 0
= 0
= 0
= −1 mA, f = 200 MHz
= 0.5 V, R
= 2.5 V, R
= 0
= 0
= 5 mA
= 0.3 mA
L
L
= 1 kΩ
= 1 kΩ
Marking Symbol: 7R
Internal Connection
10˚
0.3
(0.65) (0.65)
+0.1
–0.0
1
3
1.3
2.0
B
±0.1
±0.2
−30%
0.17
Min
4.9
(10 kΩ)
50
50
80
2
R
1
(47 kΩ)
0.21
Typ
150
10
R
2
SMini3-G1 Package
+30%
Max
0.25
0.25
1.20
0.1
0.5
0.2
0.2
C
E
0.15
EIAJ: SC-70
1: Base
2: Emitter
3: Collector
Unit : mm
+0.10
–0.05
MHz
Unit
mA
µA
kΩ
V
V
V
V
V
V
1