unr32a9 Panasonic Corporation of North America, unr32a9 Datasheet
unr32a9
Manufacturer Part Number
unr32a9
Description
Transistor With Builtin Resistors
Manufacturer
Panasonic Corporation of North America
Datasheet
1.UNR32A9.pdf
(3 pages)
Transistors with built-in Resistor
UNR32A9
Silicon NPN epitaxial planar type
For digital circuits
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: October 2004
• Suitable for high-density mounting downsizing of the equipment
• Contribute to low power consumption
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
Parameter
Parameter
a
Symbol
= 25°C ± 3°C
V
V
Symbol
T
V
R
P
CBO
I
T
V
V
CEO
a
I
I
I
V
stg
V
C
1
CE(sat)
T
h
CBO
j
CEO
EBO
R
f
= 25°C
CBO
CEO
FE
OH
OL
/ R
T
1
2
−55 to +125
Rating
I
I
V
V
V
V
I
V
V
V
C
C
C
100
125
CB
CE
EB
CE
CC
CC
CB
50
50
80
= 10 µA, I
= 2 mA, I
= 10 mA, I
SJH00103AED
= 50 V, I
= 6 V, I
= 10 V, I
= 50 V, I
= 5 V, V
= 5 V, V
= 10 V, I
B
C
E
Conditions
Unit
B
B
B
mW
B
C
E
E
mA
= 0
= 0
°C
°C
= 0
V
V
= 5 mA
= 0.3 mA
= 0.5 V, R
= 2.5 V, R
= 0
= 0
= −2 mA, f = 200 MHz
L
L
= 1 kΩ
= 1 kΩ
Marking Symbol: HK
Internal Connection
0.23
+0.05
–0.02
0.33
5°
+0.05
–0.02
(0.40)
(10 kΩ)
−30%
3
0.80
1.20
B
1
0.08
Min
4.9
50
50
30
R
R
(0.40)
±0.05
±0.05
2
1
2
(1 kΩ)
0.10
Typ
150
1
SSSMini3-F1 Package
+30%
Max
0.25
0.12
0.1
0.5
1.5
0.2
0.10
C
E
1: Base
2: Emitter
3: Collector
+0.05
–0.02
Unit: mm
MHz
Unit
mA
µA
µA
kΩ
V
V
V
V
V
1
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unr32a9 Summary of contents
Page 1
... Transistors with built-in Resistor UNR32A9 Silicon NPN epitaxial planar type For digital circuits ■ Features • Suitable for high-density mounting downsizing of the equipment • Contribute to low power consumption ■ Absolute Maximum Ratings T Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) ...
Page 2
... UNR32A9 120 100 120 ( °C ) Ambient temperature T a 250 = 85°C a 200 150 −25°C 100 25° 0 100 1 000 ( mA ) Collector current I C 0 25°C ...
Page 3
Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...