unr31a5 Panasonic Corporation of North America, unr31a5 Datasheet

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unr31a5

Manufacturer Part Number
unr31a5
Description
Transistor With Builtin Resistors
Manufacturer
Panasonic Corporation of North America
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
unr31a500L
Manufacturer:
MAXIM
Quantity:
29
Transistors with built-in Resistor
UNR31A5
Silicon PNP epitaxial planar type
For digital circuits
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: August 2003
• Suitable for high-density mounting downsizing of the equipment
• Contribute to low power consumption
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high level
Output voltage low level
Input resistance
Transition frequency
Parameter
Parameter
*
a
Symbol
= 25°C ± 3°C
V
V
Symbol
T
V
P
CBO
I
T
V
V
CEO
a
I
I
I
V
stg
V
C
CE(sat)
T
h
CBO
j
CEO
EBO
R
f
= 25°C
CBO
CEO
FE
OH
OL
T
1
−55 to +125
Rating
I
I
V
V
V
V
I
V
V
V
C
C
C
−50
−50
−80
100
125
CB
CE
EB
CE
CC
CC
CB
= −10 µA, I
= −2 mA, I
= −10 mA, I
SJH00089AED
= −50 V, I
= −6 V, I
= −10 V, I
= −50 V, I
= −5 V, V
= −5 V, V
= −10 V, I
Conditions
Unit
mW
B
C
mA
°C
°C
E
V
V
B
B
B
B
C
E
E
= 0
= 0
= 0
= − 0.5 V, R
= −2.5 V, R
= 0
= 0
= −5 mA
= − 0.3 mA
= 1 mA, f = 200 MHz
L
Marking Symbol: CL
Internal Connection
L
= 1 kΩ
= 1 kΩ
0.23
+0.05
–0.02
0.33
+0.05
–0.02
(0.40)
−30%
3
−4.9
0.80
1.20
Min
−50
−50
1
B
160
±0.05
±0.05
(0.40)
R
2
1
(10 kΩ)
Typ
10
80
SSSMini3-F1 Package
− 0.01
− 0.25
+30%
− 0.1
− 0.5
− 0.2
Max
460
0.10
E
1: Base
2: Emitter
3: Collector
C
+0.05
–0.02
Unit: mm
MHz
Unit
mA
µA
µA
kΩ
V
V
V
V
V
1

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unr31a5 Summary of contents

Page 1

... Transistors with built-in Resistor UNR31A5 Silicon PNP epitaxial planar type For digital circuits ■ Features • Suitable for high-density mounting downsizing of the equipment • Contribute to low power consumption ■ Absolute Maximum Ratings T Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) ...

Page 2

... UNR31A5  140 120 100 100 120 140 ( °C ) Ambient temperature T a  450 = 400 T = 85°C a 350 300 25°C 250 −25°C 200 150 100 50 0 −1 −10 −100 ...

Page 3

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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