unr311a Panasonic Corporation of North America, unr311a Datasheet
unr311a
Manufacturer Part Number
unr311a
Description
Silicon Pnp Epitaxial Planar Transistor
Manufacturer
Panasonic Corporation of North America
Datasheet
1.UNR311A.pdf
(3 pages)
Transistors with built-in Resistor
UNR3113, UNR311A, UNR311T
Silicon PNP epitaxial planar transistor
For digital circuits
■ Features
■ Resistance by Part Number
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Publication date: May 2002
• Optimum for downsizing of the equipment and high-density mount-
• Contribute for low power consumption
• UNR3113
• UNR311A
• UNR311T
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector to base voltage
Collector to emitter voltage
Collector cutoff current
Emitter cutoff
current
Forward current
transfer ratio
Collector to emitter saturation voltage
High-level output voltage
Low-level output voltage UNR3113
ing
Parameter
Parameter
Marking symbol
UNR3113, 311A
UNR311T
UNR3113, 311A
UNR311T
EY
6X
6C
UNR311A
UNR311T
Symbol
V
V
100 kΩ
47 kΩ
22 kΩ
T
P
I
T
CBO
CEO
(R
C
stg
T
j
a
Symbol
V
1
= 25°C ± 3°C
V
V
I
I
I
V
)
V
h
CE(sat)
CBO
CEO
EBO
CBO
CEO
a
FE
OH
OL
= 25°C
−55 to +125
Rating
−100
100 kΩ
−50
−50
47 kΩ
47 kΩ
100
125
(R
I
I
V
V
V
V
I
V
V
V
V
C
C
C
2
CB
CE
EB
CE
CC
CC
CC
CC
)
= −10 µA, I
= −2 mA, I
= −10 mA, I
SJH00041CED
= −50 V, I
= −50 V, I
= −6 V, I
= −10 V, I
= −5 V, V
= −5 V, V
= −5 V, V
= −5 V, V
Unit
mW
mA
°C
°C
V
V
Conditions
B
C
E
B
B
B
B
B
B
C
E
= 0
= 0
= 0
= − 0.3 mA
= − 0.5 V, R
= −3.5 V, R
= −5.0 V, R
= −2.5 V, R
= 0
= 0
= −5 mA
Internal Connection
L
L
L
L
= 1 kΩ
= 1 kΩ
= 1 kΩ
= 1 kΩ
0.23
+0.05
–0.02
0.33
5˚
+0.05
–0.02
(0.40)
B
−4.9
Min
−50
3
0.80
1.20
−50
1
80
80
±0.05
±0.05
(0.40)
R
R
2
1
2
Typ
SSSMini3-F1 Package
− 0.25
− 0.1
− 0.5
− 0.1
− 0.2
− 0.2
Max
400
0.10
C
E
+0.05
–0.02
1: Base
2: Emitter
3: Collector
Unit: mm
Unit
mA
µA
V
V
V
V
V
1
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unr311a Summary of contents
Page 1
... Transistors with built-in Resistor UNR3113, UNR311A, UNR311T Silicon PNP epitaxial planar transistor For digital circuits ■ Features • Optimum for downsizing of the equipment and high-density mount- ing • Contribute for low power consumption ■ Resistance by Part Number Marking symbol • UNR3113 6C • ...
Page 2
... UNR3113, UNR311A, UNR311T ■ Electrical Characteristics (continued) T Parameter Input resistance UNR3113 UNR311A UNR311T Resistance ratio UNR3113 UNR311A UNR311T Gain bandwidth product Common characteristics chart 120 100 100 120 140 ( °C ) Ambient temperature 25° ...
Page 3
Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...