unr2154 Panasonic Corporation of North America, unr2154 Datasheet

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unr2154

Manufacturer Part Number
unr2154
Description
Silicon Pnp Epitaxial Planer Transistor
Manufacturer
Panasonic Corporation of North America
Datasheet
Transistors with built-in Resistor
UNR2154
Silicon PNP epitaxial planar type
For digital circuits
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2003
• High forward current transfer ratio h
• Costs can be reduced through downsizing of the equipment and
• Mini type package allowing easy automatic insertion through tape
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Transition frequency
Input resistance
Resistance ratio
reduction of the number of parts
packing and magazine packing
Parameter
Parameter
(UN2154)
a
Symbol
V
V
= 25°C ± 3°C
Symbol
T
V
FE
P
R
I
T
V
V
CBO
CEO
a
I
I
I
V
stg
V
C
CE(sat)
T
h
CBO
j
CEO
EBO
R
1
f
CBO
CEO
= 25°C
FE
OH
OL
/R
T
1
2
−55 to +150
Rating
I
I
V
V
V
V
I
V
V
V
−100
C
C
C
−30
−30
200
150
CB
CE
EB
CE
CC
CC
CB
Note) The part numbers in the parenthesis show conventional part number.
= −10 µA, I
= −2 mA, I
= −50 mA, I
SJH00009CED
= −30 V, I
= −3 V, I
= −10 V, I
= −10 V, I
= −30 V, I
= −5 V, V
= −5 V, V
Conditions
Unit
mW
B
C
mA
°C
°C
E
E
V
V
B
B
B
C
B
E
= 0
= 0
= 0
= 1 mA, f = 200 MHz
= − 0.5 V, R
= −5 mA
= − 0.33 mA
= −2.5 V, R
= 0
= 0
L
Marking Symbol: EV
Internal Connection
L
= 1 kΩ
= 1 kΩ
10˚
(0.95) (0.95)
1
2.90
1.9
±0.1
+0.20
–0.05
−30%
(47 kΩ)
B
−4.9
Min
−30
−30
0.40
3
R
80
2
R
1
(10 kΩ)
2
+0.10
–0.05
0.213
− 0.5
Typ
80
10
Mini3-G1 Package
+30%
− 0.1
− 0.5
− 0.1
− 0.2
Max
−1.2
C
E
0.16
EIAJ: SC-59
1: Base
2: Emitter
3: Collector
Unit: mm
+0.10
–0.06
MHz
Unit
mA
µA
µA
kΩ
V
V
V
V
V
1

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unr2154 Summary of contents

Page 1

... Transistors with built-in Resistor UNR2154 (UN2154) Silicon PNP epitaxial planar type For digital circuits ■ Features • High forward current transfer ratio h • Costs can be reduced through downsizing of the equipment and reduction of the number of parts • Mini type package allowing easy automatic insertion through tape packing and magazine packing ■ ...

Page 2

... UNR2154  250 200 150 100 120 160 ( °C ) Ambient temperature T a  300 = − 75° 250 25°C 200 −25°C 150 100 50 0 −1 −10 −100 −1 000 Collector current I (mA) C  ...

Page 3

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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