Transistors with built-in Resistor
UNR2154
Silicon PNP epitaxial planar type
For digital circuits
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2003
• High forward current transfer ratio h
• Costs can be reduced through downsizing of the equipment and
• Mini type package allowing easy automatic insertion through tape
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Transition frequency
Input resistance
Resistance ratio
reduction of the number of parts
packing and magazine packing
Parameter
Parameter
(UN2154)
a
Symbol
V
V
= 25°C ± 3°C
Symbol
T
V
FE
P
R
I
T
V
V
CBO
CEO
a
I
I
I
V
stg
V
C
CE(sat)
T
h
CBO
j
CEO
EBO
R
1
f
CBO
CEO
= 25°C
FE
OH
OL
/R
T
1
2
−55 to +150
Rating
I
I
V
V
V
V
I
V
V
V
−100
C
C
C
−30
−30
200
150
CB
CE
EB
CE
CC
CC
CB
Note) The part numbers in the parenthesis show conventional part number.
= −10 µA, I
= −2 mA, I
= −50 mA, I
SJH00009CED
= −30 V, I
= −3 V, I
= −10 V, I
= −10 V, I
= −30 V, I
= −5 V, V
= −5 V, V
Conditions
Unit
mW
B
C
mA
°C
°C
E
E
V
V
B
B
B
C
B
E
= 0
= 0
= 0
= 1 mA, f = 200 MHz
= − 0.5 V, R
= −5 mA
= − 0.33 mA
= −2.5 V, R
= 0
= 0
L
Marking Symbol: EV
Internal Connection
L
= 1 kΩ
= 1 kΩ
10˚
(0.95) (0.95)
1
2.90
1.9
±0.1
+0.20
–0.05
−30%
(47 kΩ)
B
−4.9
Min
−30
−30
0.40
3
R
80
2
R
1
(10 kΩ)
2
+0.10
–0.05
0.213
− 0.5
Typ
80
10
Mini3-G1 Package
+30%
− 0.1
− 0.5
− 0.1
− 0.2
Max
−1.2
C
E
0.16
EIAJ: SC-59
1: Base
2: Emitter
3: Collector
Unit: mm
+0.10
–0.06
MHz
Unit
mA
µA
µA
kΩ
V
V
V
V
V
1