unr221w Panasonic Corporation of North America, unr221w Datasheet

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unr221w

Manufacturer Part Number
unr221w
Description
Silicon Npn Epitaxial Planar Type
Manufacturer
Panasonic Corporation of North America
Datasheet
Transistors with built-in Resistor
UNR221W
Silicon NPN epitaxial planar type
For digital circuits
■ Features
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: December 2003
• Base-emitter resistance R
• Mini type package, allowing downsizing of the equipment.
• Allowing automatic insertion through tape packing.
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input resistance
Transition frequency
Parameter
Parameter
BE
: 100 kΩ,
a
Symbol
Symbol
V
= 25°C ± 3°C
V
V
V
V
I
I
I
T
CE(sat)
h
CBO
P
CEO
EBO
R
I
T
f
a
CBO
CEO
CBO
CEO
stg
FE
C
T
T
j
2
= 25°C
−55 to +150
Rating
I
I
V
V
V
V
I
V
C
C
C
100
200
150
CB
CE
EB
CE
CB
50
50
= 10 µA, I
= 2 mA, I
= 10 mA, I
SJH00011BED
= 50 V, I
= 6 V, I
= 10 V, I
= 50 V, I
= 10 V, I
B
C
E
Conditions
B
Unit
mW
E
B
C
E
mA
= 0
= 0
°C
°C
= 0
V
V
= 0.3 mA
= 0
= 0
= 5 mA
= −2 mA, f = 200 MHz
Marking Symbol: 9F
Internal Connection
10˚
(0.95) (0.95)
1
2.90
1.9
+0.20
–0.05
−30%
±0.1
B
(100 kΩ)
Min
0.40
50
50
80
3
2
R
+0.10
–0.05
2
Typ
100
100
Mini3-G1 Package
+30%
Max
0.25
100
0.1
0.5
C
E
0.16
EIAJ: SC-59
1: Base
2: Emitter
3: Collector
+0.10
–0.06
Unit: mm
MHz
Unit
µA
µA
µA
kΩ
V
V
V
1

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unr221w Summary of contents

Page 1

... Transistors with built-in Resistor UNR221W Silicon NPN epitaxial planar type For digital circuits ■ Features • Base-emitter resistance R : 100 kΩ, BE • Mini type package, allowing downsizing of the equipment. • Allowing automatic insertion through tape packing. ■ Absolute Maximum Ratings T Parameter Collector-base voltage (Emitter open) ...

Page 2

Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or ...

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