unr112y Panasonic Corporation of North America, unr112y Datasheet

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unr112y

Manufacturer Part Number
unr112y
Description
Silicon Pnp Epitaxial Planar Transistor
Manufacturer
Panasonic Corporation of North America
Datasheet
Transistors with built-in Resistor
UNR1121/1122/1123/1124/112X/112Y
(UN1121/1122/1123/1124/112X/112Y)
Silicon PNP epitaxial planar transistor
For digital circuits
I
I
I
1
G
G
G
G
G
G
G
G
Collector to base voltage
Collector to emitter voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Features
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
Resistance by Part Number
UNR1121
UNR1122
UNR1123
UNR1124
UNR112X
UNR112Y
Absolute Maximum Ratings
Parameter
0.27kΩ
2.2kΩ
4.7kΩ
2.2kΩ
3.1kΩ
10kΩ
(R
1
Symbol
)
V
V
T
P
I
T
CBO
CEO
stg
C
T
j
(Ta=25˚C)
2.2kΩ
4.7kΩ
4.6kΩ
10kΩ
10kΩ
5kΩ
–55 to +150
(R
Ratings
2
–500
)
–50
–50
600
150
Note) The part numbers in the parenthesis show conventional part number.
Unit
mW
mA
˚C
˚C
V
V
Internal Connection
R 0.7
(1.5)
B
3
(2.5)
(0.85)
0.55
6.9
(1.5)
R1
±0.1
±0.1
R 0.9
2
R2
(2.5)
1
2.5
M-A1 Package
±0.1
E
1: Base
2: Collector
3: Emitter
C
0.45
Unit: mm
(1.0)
±0.05

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unr112y Summary of contents

Page 1

... I Resistance by Part Number ( UNR1121 2.2kΩ G UNR1122 4.7kΩ G UNR1123 10kΩ G UNR1124 2.2kΩ G UNR112X 0.27kΩ G UNR112Y 3.1kΩ I Absolute Maximum Ratings Parameter Symbol Collector to base voltage V CBO Collector to emitter voltage V CEO Collector current I C Total power dissipation P T Junction temperature T j Storage temperature ...

Page 2

Transistors with built-in Resistor Electrical Characteristics Parameter Common characteristics chart 800 600 400 200 120 160 Ambient temperature Ta ( ˚ UNR1121/1122/1123/1124/112X/112Y Symbol Conditions min typ max Unit ...

Page 3

Transistors with built-in Resistor Characteristics charts of UNR1121 –240 Ta=25˚C –200 I =–1.0mA B –160 –0.9mA –0.8mA –0.7mA –120 –0.6mA –0.5mA –80 –0.4mA –0.3mA –0.2mA –40 –0.1mA 0 0 –2 –4 –6 –8 –10 – Collector to ...

Page 4

Transistors with built-in Resistor 24 f=1MHz Ta=25˚ – 0.1 – 0.3 –1 – 3 –10 – 30 –100 ( V ) Collector to base voltage V CB Characteristics charts of UNR1123 ...

Page 5

Transistors with built-in Resistor Characteristics charts of UNR1124 – 300 Ta=25˚C – 250 I = –1.0mA B – 200 – 0.9mA – 0.8mA – 0.7mA –150 – 0.6mA – 0.5mA – 0.4mA –100 – 0.3mA – 0.2mA – 50 – ...

Page 6

... Ta=25˚ –1 – 3 –10 – 30 –100 ( V ) Collector to base voltage V CB Characteristics charts of UNR112Y –240 Ta=25˚C –200 I =–1.2mA B –160 –1.0mA –0.8mA –120 –0.6mA –80 –0.4mA –40 –0.2mA 0 0 –2 –4 –6 – ...

Page 7

Request for your special attention and precautions in using the technical information and (1) If any of the products or technical information described in this book exported or provided to non-residents, the laws and regulations of the ...

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