unrf2a8 Panasonic Corporation of North America, unrf2a8 Datasheet
unrf2a8
Manufacturer Part Number
unrf2a8
Description
Transistor With Builtin Resistors
Manufacturer
Panasonic Corporation of North America
Datasheet
1.UNRF2A8.pdf
(3 pages)
Transistors with built-in Resistor
UNRF2A8
Silicon NPN epitaxial planar type
For digital circuits
Features
Features
Absolute Maximum Ratings
Absolute Maximum Ratings
Electrical Characteristics
Electrical Characteristics
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: November 2005
Optimum for high-density mounting and downsizing of the equipment for
Optimum for high-density mounting and downsizing of the equipment for
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
Ultraminiature leadless package 0.6 mm × 1.0 mm (height 0.39 mm)
Parameter
Parameter
T
a
a
a
This product complies with the RoHS Directive (EU 2002/95/EC).
= 25
= 25
T
a
a
a
= 25
= 25
°C±3°C
Symbol
V
V
T
T
T
°C
P
I
T
T
T
CBO
CEO
Symbol
stg
stg
C
V
R
T
j
j
V
V
I
I
I
V
V
1
h
h
h
CE(sat)
CBO
CEO
EBO
R
f
f
f
CBO
CEO
FE
FE
OH
OL
/ R
/ R
/ R
T
T
1
2
2
–55 to +125
Rating
I
I
V
V
V
V
I
V
V
V
C
C
C
C
C
C
C
C
C
100
125
CB
CE
CE
CE
EB
CE
CE
CE
CC
CC
CC
CC
CC
CC
CB
50
50
80
= 10
= 10
= 2 mA, I
= 2 mA, I
= 10 mA, I
= 10 mA, I
= 50 V, I
= 50 V, I
= 50 V, I
= 6 V, I
= 10 V, I
= 10 V, I
= 5 V, V
= 5 V, V
= 5 V, V
= 5 V, V = 0.5 V, R
= 5 V, V
= 5 V, V
= 5 V, V
= 5 V, V = 2.5 V, R
= 10 V, I
SJH00118AED
µA, I
C
C
C
B
E
E
E
B
B
B
B
B
C
C
C
E
E
E
E
E
E
B
= 0
= 0
= 0
Unit
mW
Conditions
= 0
= 0
mA
= 0.5 V, R
= 0.5 V, R = 1 k
= 2.5 V, R
= 2.5 V, R = 1 k
= 0
= 0
= 0
= 5 mA
= 5 mA
=
=
°C
°C
= 0.3 mA
V
V
−2 mA, f = 200 MHz
L
L
L
L
L
L
L
L
= 1 k
= 1 kΩ
= 1 k
= 1 k
= 1 kΩ
= 1 k
Marking Symbol: 4Z
Internal Connection
Ω
Ω
1: Base
2: Emitter
3: Collector
3
1.00
−30%
±0.05
Min
0.08
4.9
50
50
20
B
5.1 kΩ
0.51 kΩ
2
1
R
R
1
0.51
2
Typ
150
3
0.1
0.25
±0.05
0.65
0.39
+30%
Max
±0.01
0.25
0.12
ML3-N2 Package
0.1
0.5
2.0
0.2
0.25
+0.01
−0.03
C
E
±0.05
1
2
Unit: mm
0.05
MHz
Unit
mA
kΩ
kΩ
k
µA
µA
±0.03
V
V
V
V
V
1
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unrf2a8 Summary of contents
Page 1
... This product complies with the RoHS Directive (EU 2002/95/EC). Transistors with built-in Resistor UNRF2A8 Silicon NPN epitaxial planar type For digital circuits Features Features Optimum for high-density mounting and downsizing of the equipment for Optimum for high-density mounting and downsizing of the equipment for ...
Page 2
... T = 25° 600 µA B 550 µA 500 µA 450 µA 80 400 µA 350 µA 300 µA 40 250 µA 200 µ Collector-emitter voltage V CE UNRF2A8_C - V MHz T = 25° ...
Page 3
This product complies with the RoHS Directive (EU 2002/95/EC). Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book ...