unrf1a7 Panasonic Corporation of North America, unrf1a7 Datasheet - Page 2

• Manufacturer Part Number: unrf1a7
• Description: Transistor With Builtin Resistors Silicon Pnp Epitaxial Planar Type
• Manufacturer: Panasonic Corporation of North America

UNRF1A7
2
−100
− 0.1
120
450
400
350
300
250
200
150
100
−10
80
40
50
−1
− 0.1
0
0
−1
0
V
T
V
Ambient temperature T
a
CE
O
Collector current I
= 25°C
= − 0.2 V
Output current I
= −10 V
T
a
UNRF1A7_P
UPRF1A7_ h
UNRF1A7_V
40
= 85°C
−25°C
25°C
−10
−1
V
h
P
FE
IN
T
 T
 I
 I
80
a
C
O
FE
−100
O
−10
T
IN
C
-T
- I
-I
(m A )
C
(mA)
a
O
This product complies with the RoHS Directive (EU 2002/95/EC).
a
( °C )
120
−1 000
−100
−100
−90
−80
−70
−60
−50
−40
−30
−20
−10
0.1
10
1
0
0
0
Collector-emitter voltage V
Collector-base voltage V
T
a
−5
= 25°C
−2
SJH00112AED
−10
UNRF1A7_ C
UNRF1A7_I
−4
−15
C
I
C
ob
 V
−20
 V
−6
−25 −30 −35 −40
CE
ob
CB
C
-V
- V
−8
T
f = 1 MHz
I
CE
B
CB
a
= −500 µA
= 25°C
CB
−450 µA
−400 µA
−250 µA
−150 µA
−350 µA
−300 µA
−200 µA
−100 µA
−10
CE
−50 µA
(V)
( V )
−12
− 0.01
− 0.01
−100
−0.1
− 0.1
−10
−10
−1
−1
− 0.1
0
I
C
V
T
−25°C
a
O
/ I
Collector current I
− 0.5
= 25°C
= −5 V
Input voltage V
B
UNRF1A7_ V
= 10
T
UNRF1A7_I
a
= 85°C
V
−1
−1.0
I
CE(sat)
O
 V
25°C
−1.5
 I
CE(sat)
IN
O
IN
−10
-V
C
C
IN
(V)
(mA)
−2.0
- I
C
−2.5
−100