Transistors with built-in Resistor
UNR7231
Silicon NPN epitaxial planar type
For low-frequency amplification
■ Features
■ Absolute Maximum Ratings T
Note) * : Printed circuit board: Copper foil area of 1 cm
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: January 2004
• High forward current transfer ratio h
• Costs can be reduced through downsizing of the equipment and
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input resistance
Resistance ratio
Transition frequency
reduction of the number of parts.
2. * : Pulse measurement
board thickness of 1.7 mm for the collector portion
Parameter
Parameter
*
*
(UN7231)
*
a
Symbol
Symbol
V
= 25°C ± 3°C
R
V
V
V
V
I
I
I
T
CE(sat)
h
I
CBO
FE
P
CEO
EBO
R
1
I
T
f
CBO
CEO
CBO
CEO
a
CP
FE
/R
C
stg
T
T
1
j
= 25°C
2
−55 to +150
Rating
I
I
V
V
V
V
I
V
2
150
C
C
C
Note) The part number in the parenthesis shows conventional part number.
0.7
1.5
1.0
20
20
CB
CE
EB
CE
CB
or more, and the
= 10 µA, I
= 1 mA, I
= 500 mA, I
SJH00032BED
= 20 V, I
= 15 V, I
= 15 V, I
= 14 V, I
= 10 V, I
B
Conditions
Unit
E
E
°C
°C
W
B
C
C
E
V
V
A
A
= 0
= 0
= −20 mA, f = 200 MHz
B
= 0
= 0
= 0
= 150 mA
= 5 mA
Marking Symbol: IC
Internal Connection
0.4
1.5
±0.08
±0.1
3˚
1
3.0
4.5
1.6
0.016
(47 kΩ)
±0.15
Min
±0.1
±0.2
B
800
0.7
20
20
2
0.5
R
R
1
±0.08
2
(1 kΩ)
3
0.021
Typ
1.0
55
45˚
MiniP3-F1 Package
0.025
2 100
Max
1.5
0.5
0.4
1.3
10
1
±0.1
0.4
C
E
1: Base
2: Collector
3: Emitter
±0.04
Unit: mm
MHz
Unit
mA
µA
µA
kΩ
V
V
V
1