s29gl064m Meet Spansion Inc., s29gl064m Datasheet - Page 72
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s29gl064m
Manufacturer Part Number
s29gl064m
Description
3.0 Volt-only Page Mode Flash Memory Featuring 0.23 ?m Mirrorbit Process Technolog
Manufacturer
Meet Spansion Inc.
Datasheet
1.S29GL064M.pdf
(116 pages)
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70
Read (6)
Reset (7)
Enter Secured Silicon Sector Region
Exit Secured Silicon Sector Region
Write to Buffer (11)
Program Buffer to Flash
Write to Buffer Abort Reset (13)
Chip Erase
Sector Erase
Program/Erase Suspend (14)
Program/Erase Resume (15)
CFI Query (16)
Legend:
X = Don’t care
RA = Read Address of memory location to be read.
RD = Read Data read from location RA during read operation.
PA = Program Address. Addresses latch on falling edge of WE# or
CE# pulse, whichever happens later.
Notes:
1.
2.
3.
4.
5.
6.
7.
8.
9.
See
All values are in hexadecimal.
Shaded cells indicate read cycles. All others are write cycles.
During unlock and command cycles, when lower address bits are
555 or AAA as shown in table, address bits above A11 are don’t
care.
Unless otherwise noted, address bits A21–A11 are don’t cares.
No unlock or command cycles required when device is in read
mode.
Reset command is required to return to read mode (or to erase-
suspend-read mode if previously in Erase Suspend) when device
is in autoselect mode, or if DQ5 goes high while device is
providing status information.
Fourth cycle of autoselect command sequence is a read cycle.
Data bits DQ15–DQ8 are don’t care. See
Sequence
Device ID must be read in three cycles.
Manufacturer ID
Device ID (9)
Secured Silicon Sector Factory
Protect (10)
Sector Group Protect Verify (12)
Table 1
section or more information.
Command
Sequence
(Note
for description of bus operations.
1)
Table 35. Command Definitions (x8 Mode, BYTE# = V
1
1
4
4
4
4
3
4
3
1
3
6
6
1
1
1
Autoselect Command
Addr Data Addr Data
XXX
AAA
AAA
AAA
AAA
AAA
AAA
AAA
AAA
AAA
AAA
XXX
XXX
RA
SA
AA
First
S29GL-M MirrorBit
RD
AA
AA
AA
AA
AA
AA
AA
AA
AA
AA
B0
F0
29
30
98
555
555
555
555
555
555
555
555
555
555
Second
55
55
55
55
55
55
55
55
55
55
D a t a
Third
Addr
AAA
AAA
AAA
AAA
AAA
AAA
AAA
AAA
AAA
TM
PD = Program Data for location PA. Data latches on rising edge of
WE# or CE# pulse, whichever happens first.
SA = Sector Address of sector to be verified (in autoselect mode) or
erased. Address bits A21–A15 uniquely select any sector.
WBL = Write Buffer Location. Address must be within same write
buffer page as PA.
BC = Byte Count. Number of write buffer locations to load minus 1.
10. If WP# protects highest address sector, data is 98h for factory
11. Data is 00h for an unprotected sector group and 01h for a
12. Total number of cycles in command sequence is determined by
13. Command sequence resets device for next command after
14. System may read and program in non-erasing sectors, or enter
15. Erase Resume command is valid only during Erase Suspend
16. Command is valid when device is ready to read array data or
17. Refer to
SA
Flash Family
locked and 18h for not factory locked. If WP# protects lowest
address sector, data is 88h for factory locked and 08h for not
factor locked.
protected sector group.
number of bytes written to write buffer. Maximum number of
cycles in command sequence is 37, including “Program Buffer to
Flash” command.
aborted write-to-buffer operation.
autoselect mode, when in Erase Suspend mode. Erase Suspend
command is valid only during a sector erase operation.
mode.
when device is in autoselect mode.
per device density and model number.
Data
90
90
90
90
88
90
25
F0
80
80
S h e e t
Bus Cycles (Notes 2–5)
(SA)X04
Table
Addr
X00
X02
X06
XXX
AAA
AAA
SA
17, AutoSelect Codes for individual Device IDs
Fourth
(Note
00/01
Data
01
00
BC
AA
AA
7E
10)
IL
Addr
X1C
)
555
555
PA
Fifth
S29GL-M_00_B8 February 7, 2007
(Note
Data
PD
55
55
17)
Addr
WBL
AAA
X1E
SA
Sixth
(Note
Data
PD
10
30
17)