s908ab32ag0cfue Freescale Semiconductor, Inc, s908ab32ag0cfue Datasheet - Page 76

• Manufacturer Part Number: s908ab32ag0cfue
• Description: M68hc08 Microcontrollers
• Manufacturer: Freescale Semiconductor, Inc

EEPROM
5.9.2 EEPROM Erasing
Technical Data
76
D. The delay time for the EEPGM bit to be cleared in AUTO mode is less
than t
For forward compatibility, software should not make any dependency on
this delay time.
E. Any attempt to clear both EEPGM and EELAT bits with a single
instruction will only clear EEPGM. This is to allow time for removal of
high voltage from the EEPROM array.
The programmed state of an EEPROM bit is logic 0. Erasing changes
the state to a logic 1. Only EEPROM bytes in the non-protected blocks
and EENVR register can be erased.
Use the following procedure to erase a byte, block, or the entire
EEPROM:
1. Configure EERAS1 and EERAS0 for byte, block, or bulk erase; set
2. Byte erase: write any data to the desired address.
3. Set the EEPGM bit.
4. Wait for a time: t
5. Clear EEPGM bit.
6. Wait for a time, t
7. Poll the EEPGM bit until it is cleared by the internal timer.
8. Clear EELAT bits.
EEPGM
EELAT in EECR.
Block erase: write any data to an address within the desired
block.
Bulk erase: write any data to an address within the array.
Go to step 7 if AUTO is set.
t
Go to step 8.
EBULK
. However, on other MCUs, this delay time may be different.
(B)
for bulk erase.
EEPROM
EBYTE
EEFPV
(A)
(E)
(C)
, for the erasing voltage to fall.
for byte erase; t
EBLOCK
MC68HC908AB32
Freescale Semiconductor
for block erase;
(B)
—
(B)
(D)
Rev. 1.1