lsi1013xt1g Leshan Radio Company, lsi1013xt1g Datasheet - Page 2

• Manufacturer Part Number: lsi1013xt1g
• Description: P-channel 1.8-v G-s Mosfet
• Manufacturer: Leshan Radio Company

Notes
a.
b.
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Pulse test; pulse width v 300 ms, duty cycle v 2%.
Guaranteed by design, not subject to production testing.
b
Parameter
a
a
a
a
_
Symbol
V
r
I
DS(on)
DS(on)
t
t
I
I
GS(th)
D(on)
V
Q
Q
d(on)
d(off)
GSS
DSS
Q
g
t
SD
t
fs
gs
gd
r
f
g
V
I
D
DS
^ –200 mA, V
V
= –10 V, V
DS
V
V
V
V
GS
= –16 V, V
V
GS
GS
V
I
DS
V
S
V
V
V
DS
DS
DS
DD
DD
Test Condition
= –150 mA, V
DS
= –1.8 V, I
= –4.5 V, I
= –2.5 V, I
= –10 V, I
= –5 V, V
= V
= –16 V, V
= –10 V, R
= –10 V, R
= 0 V, V
GS
GS
GEN
GS
= –4.5 V, I
, I
D
D
D
= –4.5 V, R
= 0 V, T
GS
GS
D
D
= –250 mA
= –300 m A
= –250 mA
= –150 m A
GS
= –350 mA
L
L
GS
= –4.5 V
= "4.5 V
= 47 W
= 47 W
= 0 V
= 0 V
LESHAN RADIO COMPANY, LTD.
D
J
= –250 mA
= 85_C
G
= 10 W
–0.45
Min
–700
Typ
1500
–0.3
–0.8
150
450
"1
0.8
1.2
1.8
0.4
35
11
5
9
LSI1013XT1G
Max
–100
–1.2
"2
1.2
1.6
2.7
–5
2/6
Unit
mA
mA
nA
mA
pC
ns
W
V
S
V