lsi1013xt1g Leshan Radio Company, lsi1013xt1g Datasheet - Page 3

• Manufacturer Part Number: lsi1013xt1g
• Description: P-channel 1.8-v G-s Mosfet
• Manufacturer: Leshan Radio Company

For the following graphs, p-channel negative polarities for all voltage and current values are represented as positive values.
V
GS
= 5 thru 3 V
1.0
0.8
0.6
0.4
0.2
0.0
4.0
3.2
2.4
1.6
0.8
0.0
0.0
5
4
3
2
1
0
0
0.0
V
I
D
DS
0.2
0.5
= 250 mA
On-Resistance vs. Drain Current
200
= 10 V
V
DS
0.4
Output Characteristics
– Drain-to-Source Voltage (V)
V
Q
1.0
GS
I
D
g
V
– Drain Current (mA)
– Total Gate Charge (nC)
= 1.8 V
0.6
GS
400
Gate Charge
= 2.5 V
1.5
0.8
600
1.0
2.0
V
GS
1.2
= 4.5 V
800
2.5
2.5 V
1.8 V
2 V
1.4
1000
_
3.0
1.6
LESHAN RADIO COMPANY, LTD.
1000
800
600
400
200
120
100
1.6
1.4
1.2
1.0
0.8
0.6
0
80
60
40
20
0.0
0
–50
0
C
On-Resistance vs. Junction Temperature
rss
–25
0.5
V
4
GS
Transfer Characteristics
V
C
DS
T
– Gate-to-Source Voltage (V)
oss
0
1.0
J
C
– Junction Temperature ( _ C)
iss
– Drain-to-Source Voltage (V)
Capacitance
8
25
1.5
25_C
LSI1013XT1G
V
I
D
GS
T
= 350 mA
50
J
= –55_C
= 4.5 V
12
2.0
75
V
I
D
GS
= 150 mA
16
125_C
2.5
= 1.8 V
3/6
100
3.0
125
20