ne552r479a-t1a-a California Eastern Laboratories, ne552r479a-t1a-a Datasheet

no-image

ne552r479a-t1a-a

Manufacturer Part Number
ne552r479a-t1a-a
Description
Nec S 3.0 V, 0.25 W L&s-band Medium Power Silicon Ld-mosfet
Manufacturer
California Eastern Laboratories
Datasheet
1.NE552R479A-T1A-A.pdf (9 pages)

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
NE552R479A-T1A-A
Manufacturer:
EPSON
Quantity:
12 000
DESCRIPTION
NEC's NE552R479A is an N-Channel silicon power laterally
diffused MOSFET specially designed as the transmission
power amplifier for mobile and fixed wireless applications.
Die are manufactured using NEC's NEWMOS2 technology
(NEC's 0.6 μm WSi gate lateral MOSFET) and housed in a
surface mount package.
ELECTRICAL CHARACTERISTICS
FEATURES
• LOW COST PLASTIC SURFACE MOUNT PACKAGE
• HIGH OUTPUT POWER: +26 dBm TYP at V
• HIGH LINEAR GAIN: 11 dB TYP @ 2.45 GHz
• SINGLE SUPPLY: 2.8 to 6 V
• SURFACE MOUNT PACKAGE: 5.7
Notes:
1. DC performance is tested 100%. Several samples per wafer are tested for RF performance. Wafer rejection criteria for standard devices is 1
reject for several samples.
SYMBOLS
BV
P
η
I
I
R
V
GSS
DSS
G
g
OUT
ADD
I
TH
TH
D
DSS
m
L
MEDIUM POWER SILICON LD-MOSFET
Output Power
Linear Gain
Power Added Efficiency
Drain Current
Gate-to-Source Leakage Current
Saturated Drain Current
(Zero Gate Voltage Drain Voltage)
Gate Threshold Voltage
Transconductance
Drain-to-Source Breakdown Voltage
Thermal Resistance
PACKAGE OUTLINE
PART NUMBER
CHARACTERISTICS
NEC's 3.0 V, 0.25 W L&S-BAND
x
5.7
x
1.1 mm MAX
DS
(T
= 3.0 V
A
= 25°C)
UNITS
°C/W
dBm
dB
nA
nA
%
A
V
S
V
24.0
MIN
35
15
1
NE552R479A
OUTLINE DIMENSIONS
APPLICATIONS
• DIGITAL CELLULAR PHONES:
• ANALOG CELLULAR PHONES:
• OTHERS:
3.0 V GSM1900 Pre Driver
2.4 V AMPS Handsets
W-LAN
Short Range Wireless
Retail Business Radio
Special Mobile Radio
TYP
26.0
79A
11.0
230
1.4
0.4
45
18
Gate
California Eastern Laboratories
MAX
4.2 MAX.
5.7 MAX.
100
100
1.9
Source
10
0.4±0.15
PACKAGE OUTLINE 79A
Drain
Pin = 10 dBm for linear gain
V
f = 2.45 GHz, V
I
V
DS
DSQ
TEST CONDITIONS
DS
P
Channel-to-Case
NE552R479A
in
= 3.5 V, I
= 3.5 V, I
= 200 mA (RF OFF)
= 19 dBm, except
I
V
V
(Units in mm)
DSS
GS
DS
Gate
= 10 μA
= 5.0 V
= 6.0 V
DS
DS
DS
(Bottom View)
=
=
100 mA
= 3.0 V,
1.5±0.2
3.6±0.2
Source
1 mA
0.8 MAX.
Drain

Related parts for ne552r479a-t1a-a

Image
Part Number
Description
Manufacturer
Datasheet
Request R
UPC2747T
Part Number:
UPC2747T
Description:
Manufacturer:
California Eastern Laboratories
Datasheet:
UPC2747T.pdf (20 pages)
PS2566L-1-V
Part Number:
PS2566L-1-V
Description:
Manufacturer:
California Eastern Laboratories
Datasheet:
PS2566L-1-V.pdf (22 pages)
PS2533L-1-E3
Part Number:
PS2533L-1-E3
Description:
Manufacturer:
California Eastern Laboratories
Datasheet:
PS2533L-1-E3.pdf (18 pages)
PS2501L-1-E4
Part Number:
PS2501L-1-E4
Description:
Manufacturer:
California Eastern Laboratories
PS2841-4B-F3
Part Number:
PS2841-4B-F3
Description:
Manufacturer:
California Eastern Laboratories
Datasheet:
PS2841-4B-F3.pdf (11 pages)
PS2801
Part Number:
PS2801
Description:
Manufacturer:
California Eastern Laboratories
Datasheet:
PS2801.pdf (12 pages)
PS2502L1
Part Number:
PS2502L1
Description:
IC,HIGH ISO. VOLTAGE DARLINGTON TRANSISTOR, MULTI PHOTOCOUPLER,DIP-4-SMD
Manufacturer:
California Eastern Laboratories / NEC
upc8112t
Part Number:
upc8112t
Description:
3 V Silicon Mmic L-band Frequency Down Converter
Manufacturer:
California Eastern Laboratories
Datasheet:
UPC8112T.pdf (4 pages)
upc8163tb-e3
Part Number:
upc8163tb-e3
Description:
3 V Silicon Rfic Frequency Upconverter
Manufacturer:
California Eastern Laboratories
Datasheet:
UPC8163TB-E3.pdf (5 pages)
upg2008tk
Part Number:
upg2008tk
Description:
Necs L,s Band Ultra Small Spdt Gaas Mmic Switch
Manufacturer:
California Eastern Laboratories
Datasheet:
UPG2008TK.pdf (2 pages)
upg174ta
Part Number:
upg174ta
Description:
L-band Pa Driver Amplifier
Manufacturer:
California Eastern Laboratories
Datasheet:
UPG174TA.pdf (2 pages)
upa809t
Part Number:
upa809t
Description:
Npn Silicon High Frequency Transistor
Manufacturer:
California Eastern Laboratories
Datasheet:
UPA809T.pdf (5 pages)
ND487
Part Number:
ND487
Description:
Quad Schottky Diodes
Manufacturer:
California Eastern Laboratories / NEC
Datasheet:
ND487.pdf (1 page)
ND487xx
Part Number:
ND487xx
Description:
Silicon Schottky Varrier Diodes
Manufacturer:
California Eastern Laboratories / NEC
Datasheet:
ND487XX.pdf (1 page)
PS2501-1A
Part Number:
PS2501-1A
Description:
High Isolation Voltage Single Transistor Type Multi Photocoupler Series
Manufacturer:
California Eastern Laboratories / NEC

ne552r479a-t1a-a Summary of contents

Page 1

... HIGH LINEAR GAIN TYP @ 2.45 GHz • SINGLE SUPPLY: 2 • SURFACE MOUNT PACKAGE: 5.7 DESCRIPTION NEC's NE552R479A is an N-Channel silicon power laterally diffused MOSFET specially designed as the transmission power amplifier for mobile and fixed wireless applications. Die are manufactured using NEC's NEWMOS2 technology (NEC's 0.6 μ ...

Page 2

... Operation in excess of any one of these parameters may result in permanent damage. 2. Duty cycle 50%, Ton ≤ ORDERING INFORMATION PART NUMBER NE552R479A-T1A-A • wide embossed taping. • Gate pin faces the perforation side of the tape. • 5 kpcs/Reel TYPICAL PERFORMANCE CURVES TOTAL POWER DISSIPATION vs. ...

Page 3

TYPICAL PERFORMANCE CURVES OUTPUT POWER, DRAIN CURRENT EFFICIENCY vs. INPUT POWER 30 Frequency = 2.45 GHz 100 out 20 η ...

Page 4

... TYPICAL SCATTERING PARAMETERS Note: This file and many other s-parameter files can be downloaded from www.cel.com j50 j25 j10 100 -j10 -j25 -j50 NE552R479A FREQUENCY S 11 GHz MAG ANG 0.10 0.877 - 70.3 0.20 0.806 -108.8 0.30 0.775 -129.7 0.40 0.764 -142 ...

Page 5

... TYPICAL SCATTERING PARAMETERS Note: This file and many other s-parameter files can be downloaded from www.cel.com j50 j25 j10 100 -j10 -j25 -j50 NE552R479A 200 FREQUENCY S 11 GHz MAG ANG 0.10 0.881 - 80.4 0.20 0.833 -119.4 0.30 0.813 -139.1 0.40 0.805 -151 ...

Page 6

... APPLICATION CIRCUIT (2.40-2.48 GHz C11 P1 GND C13 J1 IN C14 er=4.2 t=0.028 J3 +Vg C13 C11 INPUT NE552R479A PARTS LIST 1 600S3R3CW C14 1 TF-100637 4 2 MCH185A101JK C2,C3 1 MCR03J200 R1 2 600S2R7BW C4,C7 2 600S5R6CW C1,C5 1 600S1R5CW C6 2 TAJB475K010R C12, C13 2 MCH215F104ZP C10, C11 2 0805CG102J9BB04 ...

Page 7

TYPICAL APPLICATION CIRCUIT PERFORMANCE OUTPUT POWER vs. INPUT POWER 2.44 GHz 3.6 V, 100mA 22 3.6 V, 300mA Input Power, P (dBm) IN ...

Page 8

RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Peak temperature (package surface temperature) Time ...

Page 9

Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

Related keywords