ne552r479a-t1a-a California Eastern Laboratories, ne552r479a-t1a-a Datasheet - Page 2

• Manufacturer Part Number: ne552r479a-t1a-a
• Description: Nec S 3.0 V, 0.25 W L&s-band Medium Power Silicon Ld-mosfet
• Manufacturer: California Eastern Laboratories

TYPICAL PERFORMANCE CURVES
Notes:
1. Operation in excess of any one of these parameters may result
2. Duty cycle 50%, Ton
ORDERING INFORMATION
ABSOLUTE MAXIMUM RATINGS
SYMBOLS
NE552R479A-T1A-A • 12 mm wide embossed taping.
in permanent damage.
PART NUMBER
T
V
V
T
I
I
P
STG
DS
DS
GS
CH
DS
T
25
20
15
10
5
0
0
Drain Supply Voltage
Gate Supply Voltage
Drain Current
Drain Current (Pulse Test)
Total Power Dissipation
Channel Temperature
Storage Temperature
TOTAL POWER DISSIPATION vs.
25
PARAMETERS
Case Temperature, T
CASE TEMPERATURE
≤ 1 s.
• Gate pin faces the perforation side of
• 5 kpcs/Reel
50
the tape.
75
R
TH
= 10°C/W
100
2
C
QTY
(°C)
UNITS
125
mA
mA
°C
°C
W
V
V
150
1
(T
-55 to +125
RATINGS
A
15.0
= 25 °C)
(T
300
600
125
5.0
10
A
= 25°C)
LARGE SIGNAL IMPEDANCE
(V
Note:
1. Z
RECOMMENDED OPERATING LIMITS
Notes:
1. Duty cycle 50%, Ton
2. f = 2.45 GHz, V
SYMBOLS
DS
voltage, idling current, input power and frequency.
FREQUENCY (GHz)
OL
V
V
P
I
= 3.0 V, I
DS
DS
GS
IN
is the conjugate of optimum load impedance at given
0.6
0.4
0.2
1.0
0.8
0.0
2.45
0.00
D
Drain to Source Voltage
Gate Supply Voltage
Drain Current
Input Power
PARAMETERS
= 200 mA, f = 2.45 GHz, P
DS
2.0
DRAIN CURRENT vs.
= 3.0 V
Drain Voltage, V
DRAIN VOLTAGE
≤ 1 s.
2
4.0
1
.
2.96 −j7.78
Z
in
Gate Voltage (V)
(Ω)
6.0
D
UNITS
(V)
dBm
mA
out
V
V
8.0
= 400 mW)
3.75
3.25
3.50
3.00
2.50
2.20
2.75
2.25
1.75
TYP
3.36 −j8.42
200
3.0
2.0
19
10.0
Z
OL
(Ω)
MAX
500
1
6.0
3.0
25