cat5411 Catalyst Semiconductor, cat5411 Datasheet - Page 4
![no-image](/images/manufacturer_photos/0/1/126/catalyst_semiconductor_sml.jpg)
cat5411
Manufacturer Part Number
cat5411
Description
Dual Digitally Programmable Potentiometers Dpp? With 64 Taps And Spi Interface
Manufacturer
Catalyst Semiconductor
Datasheet
1.CAT5411.pdf
(16 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
cat5411WI10
Manufacturer:
ON Semiconductor
Quantity:
135
CAT5411
ABSOLUTE MAXIMUM RATINGS
POTENTIOMETER CHARACTERISTICS
Over recommended operating conditions unless otherwise stated.
Notes:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) Absolute linearity is utilitzed to determine actual wiper voltage versus expected voltage as determined by wiper position when used as a
(3) Relative linearity is utilized to determine the actual change in voltage between two successive tap positions when used as a
(4) LSB = R
(5) n = 0, 1, 2, ..., 63
Doc. No. MD-2114 Rev. I
Parameters
Temperature Under Bias
Storage Temperature
Range
Voltage to any Pins with
Respect to V
V
Package Power Dissipa-
tion Capability (T
Lead Soldering
Temperature (10s)
Wiper Current
C
Symbol
TC
TC
CC
H
V
R
R
R
R
/C
potentiometer.
potentiometer. It is a measure of the error in step size.
R
R
TERM
V
I
fc
POT
POT
POT
POT
RATIO
RPOT
with Respect to GND
W
W
W
N
L
/C
W
TOT
Potentiometer Resistance (-00)
Potentiometer Resistance (-50)
Potentiometer Resistance (-10)
Potentiometer Resistance (-2.5)
Potentiometer Resistance
Tolerance
R
Power Rating
Wiper Current
Noise
Resolution
Absolute Linearity
Relative Linearity
Temperature Coefficient of R
Potentiometer Capacitances
Parameter
Wiper Resistance
Wiper Resistance
Voltage on any R
Ratiometric Temp. Coefficient
Frequency Response
/ 63 or (R
SS
POT
(2) (3)
A
Matching
= 25°C)
H
- R
L
) / 63, single pot
H
(3)
(2)
-55 to +125
-65 to +150
-2.0 to +7.0
or R
-2.0 to V
(1)
Ratings
+2.0
300
±12
1.0
L
Pin
CC
POT
Test Conditions
25°C, each pot
I
I
V
R
R
(1)
(1)
(1)
R
(1)
Units
W
W
mA
SS
W(n)(actual)
W(n+1)
POT
ºC
ºC
ºC
W
V
V
= +3mA @ V
= +3mA @ V
= 0V
= 50kΩ
-[R
4
W(n)+LSB
-R
RECOMMENDED OPERATING CONDITIONS
Notes:
(1) Stresses above those listed under “Absolute Maximum
(2) The minimum DC input voltage is –0.5V. During transitions,
(3) Latch-up protection is provided for stresses up to 100 mA on
(n)(expected)
Parameters
V
Industrial Temperature
(1)
CC
Ratings” may cause permanent damage to the device. These
are stress ratings only, and functional operation of the device
at these or any other conditions outside of those listed in the
operational sections of this specification is not implied.
Exposure to any absolute maximum rating for extended
periods may affect device performance and reliability.
inputs may undershoot to –2.0V for periods of less than 20 ns.
Maximum DC voltage on output pins is V
overshoot to V
address and data pins from –1V to V
CC
CC
]
(5)
= 3V
= 5V
(5)
GND
CC
Min
+2.0V for periods of less than 20 ns.
10/10/25
+300
Characteristics subject to change without notice
Typ
100
2.5
1.6
0.4
50
10
80
+2.5 to 6.0
-40 to +85
Ratings
CC
+1V.
Max
+0.2
+20
300
150
© Catalyst Semiconductor, Inc.
V
50
+6
+1
20
1
CC
CC
+0.5V, which may
Units
ppm/°C
ppm/°C
nV/√Hz
LSB
LSB
Units
ºC
V
MHz
mW
mA
kΩ
kΩ
kΩ
kΩ
pF
%
%
%
Ω
Ω
V
(4)
(4)