lmh6504mmx National Semiconductor Corporation, lmh6504mmx Datasheet - Page 2

• Manufacturer Part Number: lmh6504mmx
• Description: Wideband, Low Power, Variable Gain Amplifier
• Manufacturer: National Semiconductor Corporation

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Frequency Domain Response
BW
GF
Att Range Flat Band (Relative to Max Gain)
BW
Control
CT (dB)
GR
Time Domain Response
t
OS %
SR
Distortion & Noise Performance
HD2
HD3
THD
En tot
I
DG
DP
r
N
Symbol
, t
Absolute Maximum Ratings
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Electrical Characteristics
Unless otherwise specified, all limits guaranteed for T
±
ESD Tolerance (Note 4):
Input Current
Output Current
Supply Voltages (V
Voltage at Input/ Output pins
Storage Temperature Range
f
0.1V, R
Human Body
Machine Model
L
-3dB Bandwidth
Gain Flatness
Attenuation Range (Note 13)
Gain control Bandwidth
Feed-through
Gain Adjustment Range
Rise and Fall Time
Overshoot
Slew Rate (Note 5)
2
3
Total Harmonic Distortion
Total Equivalent Input Noise
Input Noise Current
Differential Gain
Differential Phase
= 100Ω, V
nd
rd
Harmonic Distortion
Harmonic Distortion
+
G
- V
Parameter
= +2V. Boldface limits apply at the temperature extremes.
−
)
V
+
120 mA (Note 3)
(Note 2)
+0.8V, V
−65˚C to 150˚C
(Note 1)
V
V
V
0.9V ≤ V
±
±
V
V
(Output/Input)
f
f
0.5V Step
4V Step, Non Inverting
4V Step, Inverting
2V
f
f
f = 4.43 MHz, R
OUT
OUT
OUT
G
G
<
<
>
>
0.2 dB Flatness, f
0.1 dB Flatness, f
PP
±
−
= 1V (Note 12)
= 0V, 30 MHz
10 MHz
30 MHz
1 MHz, R
1 MHz
10 mA
1000V
−0.8V
, 20 MHz
12.6V
100V
<
<
<
J
= 25˚C, V
1 V
4 V
1 V
G
Conditions
≤ 2V,
PP
PP
PP
SOURCE
, A
2
L
VMAX
±
S
= 100Ω
0.2 dB
Operating Ratings
=
<
<
Junction Temperature
Soldering Information:
Supply Voltages (V
Operating Temperature Range
Thermal Resistance:
= 50Ω
±
Infrared or Convection (20 sec)
Wave Soldering (10 sec)
30 MHz
30 MHz
8 -Pin SOIC
8-Pin MSOP
= 100
5V, A
VMAX
(Note 6)
= 9.7 V/V, R
Min
+
- V
−
)
(Note 6)
F
1500
0.45
0.13
Typ
150
150
−53
800
−47
–55
−45
9.5
2.1
4.4
2.6
= 1kΩ, R
58
40
26
80
73
20
(θ
(Note 1)
60
65
JC
)
G
(Note 6)
= 100Ω, V
Max
−40˚C to +85˚C
(θ
165
235
7V to 12V
JA
)
IN
nV/
pA/
150˚C
235˚C
260˚C
Units
=
MHz
MHz
MHz
V/µs
dBc
deg
dB
dB
dB
ns
%
%