lmh6504mmx National Semiconductor Corporation, lmh6504mmx Datasheet - Page 3

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lmh6504mmx

Manufacturer Part Number
lmh6504mmx
Description
Wideband, Low Power, Variable Gain Amplifier
Manufacturer
National Semiconductor Corporation
Datasheet
DC & Miscellaneous Performance
GACCU
G Match
K
V
V
I
I
TC I
R
C
I
TC I
R
C
V
V
R
I
V
OFFSET
+PSRR
−PSRR
I
BIAS
VG
OUT
S
Symbol
RG_MAX
Electrical Characteristics
IN
IN
IN
IN
OUT
OUT
OUT
O
Unless otherwise specified, all limits guaranteed for T
±
VG
VG
0.1V, R
NL
L
BIAS
VG
L
NL
L
Gain Accuracy
(See Application Note)
Gain Matching
(See Application Note
Gain Multiplier
(See Application Notes)
Input Voltage Range
R
Bias Current
Bias Current Drift
Input Resistance
Input Capacitance
V
V
V
V
Output Voltage Range
Output Impedance
Output Current
Output Offset Voltage
+Power Supply Rejection Ratio
(Note 9)
−Power Supply Rejection Ratio
(Note 9)
Supply Current
= 100Ω, V
G
G
G
G
G
Bias Current
Bias Drift
Input Resistance
Input Capacitance
Current
G
Parameter
= +2V. Boldface limits apply at the temperature extremes.
(Note 2) (Continued)
V
0.8V
V
0.8V
R
R
Pin 3
Pin 2 (Note 7)
Pin 2 (Note 8)
Pin 2
Pin 2
Pin 1, V
Pin 1 (Note 8)
Pin 1
Pin 1
R
R
DC
V
0V
Input Referred, 1V change,
V
Input Referred, 1V change,
V
No Load
G
G
OUT
G
G
G
G
L
L
= 100Ω
= Open
= 2.0V
= 2.0V
Open
= 100Ω
<
= 2.2V
= 2.2V
<
<
V
J
=
G
V
V
= 25˚C, V
G
±
G
G
Conditions
<
4V from Rails
= 2V (Note 7)
<
<
2V
2V
2V
3
S
=
±
5V, A
VMAX
(Note 6)
= 9.7 V/V, R
±
±
0.920
0.916
±
±
±
±
±
±
Min
–65
–65
8.5
6.5
0.48
0.40
4.8
4.0
2.0
1.7
60
40
(Note 6)
F
±
±
0.965
–190
±
±
±
±
−1.4
0.12
Typ
±
±
–76
–88
2.8
0.9
2.8
= 1kΩ, R
0.33
0.68
10
25
11
3.2
6.8
2.2
3.1
0
7
80
10
G
+2.8/−4.2
(Note 6)
= 100Ω, V
±
±
±
Max
1.01
1.02
−3.5
−3.7
±
±
0.45
0.42
15
16
3.9
55
70
www.national.com
IN
Units
pA/˚C
pA/˚C
=
V/V
mA
MΩ
MΩ
mA
mV
mA
dB
dB
µA
µA
dB
dB
pF
pF
V
V

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