bd9211f ROHM Co. Ltd., bd9211f Datasheet - Page 4

• Manufacturer Part Number: bd9211f
• Description: Led Driver Control Ic
• Manufacturer: ROHM Co. Ltd.

〇NOTE FOR USE
１２．This IC is a monolithic IC which (as shown is Fig.4)has P
１. When designing the external circuit, including adequate margins for variation between external devices and IC. Use adequate margins
２. The circuit functionality is guaranteed within of ambient temperature operation range as long as it is within recommended operating
３. Mounting failures, such as misdirection or miscounts, may harm the device.
４. A strong electromagnetic field may cause the IC to malfunction.
５. The GND pin should be the location within ±0.3V compared with the PGND pin.
６. If the voltage between VCC and I/O pins or GND and I/O pins is in opposite from the normal potential difference, unusual current flow
７. BD9211F incorporate a built-in thermal shutdown circuit (TSD circuit). The thermal shutdown circuit (TSD circuit) is designed only to
８. Absolute maximum ratings are those values that, if exceeded, may cause the life of a device to become significantly shortened.
９. About the external FET, the parasitic Capacitor may cause the gate voltage to change, when the drain voltage is switching. Make sure
１０.
１１.
Parasitic diodes can occur inevitably in the structure of the IC. The operation of parasitic diodes can result in mutual interference
among circuits as well as operation faults and physical damage. Accordingly you must not use methods by which parasitic diodes
operate, such as applying a voltage that is lower than the GND (P substrate) voltage to an input pin
this P layer of each pin. For example, the relation between each potential is as follows,
for steady state and transient characteristics.
range. The standard electrical characteristic values cannot be guaranteed at other voltages in the operating ranges, however the
variation will be small.
into pins may occur which can destroy the IC. To avoid such occurrence it is recommended to place protection diodes for prevention
against backward current flow.
shut the IC off to prevent runaway thermal operation. It is not designed to protect the IC or guarantee its operation of the thermal
shutdown circuit is assumed.
Moreover, the exact failure mode caused by short or open is not defined. Physical countermeasures, such as a fuse, need to be
considered when using a device beyond its maximum ratings.
to leave adequate margin for this IC variation.
(0.8～2.0V).
By STB voltage, BD9211F are changed to 2 states. Therefore, do not input STB pin voltage between one state and the other state
The pin connected a connector need to connect to the resistor for electrical surge destruction.
○(When GND > PinB and GND > PinA, the P-N junction operates as a parasitic diode.)
○(When PinB > GND > PinA, the P-N junction operates as a parasitic transistor.)
(PinA)
Ｎ
Ｐ
(PinA)
Parasitic diode
Resistance
P substrate
ＧＮＤ
Ｎ
Fig.4. Simplified structure of a Bipolar IC
ＧＮＤ
Ｐ
Parasitic
Ｐ
Ｎ
(PinB)
+
REV. A
substrate and between the various pins. A P-N junction is formed from
Ｎ
(PinB)
Parasitic diode
Other adjacent components
Ｐ
Transistor (NPN)
Ｃ
Ｂ
P substrate
Ｃ
Ｂ
Ｅ
Ｎ
Ｎ
ＧＮＤ
Ｐ
ＧＮＤ
Parasitic diode
Ｅ
Ｐ
Ｎ
ＧＮＤ
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