SI5475DC-T1 Vishay Intertechnology, SI5475DC-T1 Datasheet
SI5475DC-T1
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SI5475DC-T1 Summary of contents
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P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY V (V) R (Ω) DS DS(on) 0.032 4 0.040 2 0.052 1 1206-8 ChipFET ...
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Si5475DDC Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Drain-Source Breakdown Voltage V Temperature Coefficient DS V Temperature Coefficient GS(th) Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current a On-State Drain Current a ...
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.0 0.5 1.0 1 Drain-to-Source Voltage (V) DS Output Characteristics 0. ...
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Si5475DDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 T = 150 ° 0.0 0.2 0.4 0 Source-to-Drain Voltage (V) SD Forward Diode Voltage vs. Temp. 0.8 0.7 0.6 0.5 0.4 0.3 0.2 ...
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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Package Limited Case Temperature (°C) C Current Derating* * The power dissipation P is based J(max) dissipation limit ...
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Si5475DDC Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single ...
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... All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. ...