Si5402DC-DS Vishay Intertechnology, Si5402DC-DS Datasheet - Page 2
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Si5402DC-DS
Manufacturer Part Number
Si5402DC-DS
Description
Ds-spice Model For Si5402DC
Manufacturer
Vishay Intertechnology
Datasheet
1.SI5402DC-DS.pdf
(3 pages)
SPICE Device Model Si5402DC
Vishay Siliconix
Notes
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
www.vishay.com
2
SPECIFICATIONS (T
Static
Gate Threshold Voltage
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charg
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
b
Parameter
a
a
a
J
= 25°C UNLESS OTHERWISE NOTED)
a
Symbol
V
r
I
t
t
DS(on)
V
Q
Q
D(on)
GS(th)
d(on)
d(off)
g
Q
t
t
t
SD
rr
fs
gs
gd
r
f
g
V
I
DS
D
≅ 1 A, V
I
= 15 V, V
F
V
Test Conditions
V
= 1.1 A, di/dt = 100 A/µs
V
V
V
V
I
DS
GS
S
DD
DS
GS
DS
= 1.1 A, V
= V
= 4.5 V, I
= 15 V, R
≥ 5 V, V
= 10 V, I
= 10 V, I
GEN
GS
GS
, I
= 10 V, R
= 10 V, I
D
GS
D
D
= 250 µA
GS
D
L
= 4.9 A
= 4.9 A
= 3.9 A
= 10 V
= 15 Ω
= 0 V
D
G
= 4.9 A
= 6 Ω
Typical
3.11.3
0.031
0.042
1.76
13.1
147
0.8
3.1
15
11
19
28
30
8
Document Number: 71572
Unit
nC
ns
Ω
V
A
S
V
07-Oct-99