el5130isz-t7 Intersil Corporation, el5130isz-t7 Datasheet - Page 2

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el5130isz-t7

Manufacturer Part Number
el5130isz-t7
Description
300mhz Low Noise Amplifiers
Manufacturer
Intersil Corporation
Datasheet
Absolute Maximum Ratings
Slewrate between V
Supply Voltage from V
I
Continuous Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typical values are for information purposes only. Unless otherwise noted, all tests
are at the specified temperature and are pulsed tests, therefore: T
Electrical Specifications
IN
V
T
IB
I
T
PSRR
CMRR
CMIR
R
C
I
AVOL
V
I
BW
BW
GBWP
PM
SR
t
t
t
dG
dP
e
i
OS
S
SC
R
PD
S
N
PARAMETER
N
C
C
OS
IN
IN
O
-, I
, t
V
I
OS
F
IN
OS
+, CE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mA
Offset Voltage
Offset Voltage Temperature Coefficient
Input Bias Current
Input Offset Current
Input Bias Current Temperature
Coefficient
Power Supply Rejection Ratio
Common Mode Rejection Ratio
Common Mode Input Range
Input Resistance
Input Capacitance
Supply Current
Open Loop Gain
Output Voltage Swing
Short Circuit Current
-3dB Bandwidth
±0.1dB Bandwidth
Gain Bandwidth Product
Phase Margin
Slew Rate
Rise Time, Fall Time
Propagation Delay
0.01% Settling Time
Differential Gain
Differential Phase
Input Noise Voltage
Input Noise Current
S
+ and V
S
+ to V
S
S
- . . . . . . . . . . . . . . . . . . . . . . . . 1V/µs
- . . . . . . . . . . . . . . . . . . . . . . . 13.2V
DESCRIPTION
2
V
S
(T
+ = +5V, V
A
= +25°C)
S
- = -5V, R
J
= T
L
EL5130, EL5131
Measured from T
V
V
Measured from T
V
V
Guaranteed by CMRR test
Common mode
V
R
R
R
A
A
R
V
±0.1V
±0.1V
A
A
f = 10kHz
f = 10kHz
= 500Ω, R
C
V
V
V
V
IN
IN
S
IN
OUT
S
L
L
L
L
= T
= 1kΩ
= +5, R
= +5, R
= +2, R
= +2, R
= ±4.75V to ±5.25V
= 150Ω
= 10Ω
= 1kΩ, C
= ±5V, R
= 0V
= 0V
= ±3.0V
A
STEP
STEP
= ±2.5V, R
,
R
G
L
L
F
F
F
L
L
= 500Ω
= 500Ω
= 1kΩ
= 1kΩ
= 50Ω, C
= 900Ω, R
= 150Ω, V
= 6pF
CONDITIONS
Thermal Information
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +125°C
Ambient Operating Temperature . . . . . . . . . . . . . . . .-40°C to +85°C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . +125°C
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Curves
Pb-free reflow profile . . . . . . . . . . . . . . . . . . . . . . . . . .see link below
L
MIN
MIN
= 1kΩ to GND
http://www.intersil.com/pbfree/Pb-FreeReflow.asp
to T
to T
L
= 5pF, T
G
OUT
MAX
MAX
= 100Ω
= ±2.5V
A
= +25°C, Unless Otherwise Specified.
-500
±3.5
±3.5
MIN
-0.9
225
1.5
3.0
±3
75
95
10
50
5
1500
TYP
2.27
±3.3
3.54
±3.8
±3.3
TBD
TBD
0.01
0.01
100
100
300
350
110
0.2
0.8
1.8
1.1
90
20
16
60
55
14
-3
1
MAX
500
0.9
3.3
4.1
May 4, 2007
nV/√Hz
pA/√Hz
µV/°C
nA/°C
FN7381.4
UNIT
kV/V
MHz
MHz
MHz
V/µs
mV
mA
mA
µA
nA
dB
dB
pF
ns
ns
ns
%
V
V
V
°
°

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