SI5975DC-T1 Vishay Intertechnology, SI5975DC-T1 Datasheet - Page 2

• Manufacturer Part Number: SI5975DC-T1
• Description: Dual P-channel 12-V (d-s) Mosfet
• Manufacturer: Vishay Intertechnology

Notes
a.
b.
www.vishay.com
2-2
Si5975DC
Vishay Siliconix
SPECIFICATIONS (T
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.
Guaranteed by design, not subject to production testing.
10
8
6
4
2
0
0.0
b
Parameter
0.5
V
a
a
DS
Output Characteristics
a
-- Drain-to-Source Voltage (V)
1.0
a
J
= 25_C UNLESS OTHERWISE NOTED)
V
1.5
GS
= 5 thru 2.5 V
2.0
Symbol
1.5 V
V
2 V
1 V
r
I
DS(on)
DS(on)
t
I
t
I
I
GS(th)
D(on)
V
Q
Q
d(off)
d(on)
GSS
DSS
DSS
g
Q
t
SD
t
t
rr
fs
gs
gd
r
f
g
2.5
3.0
V
I
V
DS
D
DS
≅ --1 A, V
= --6 V, V
I
V
F
= --9.6 V, V
V
V
V
V
DS
V
V
GS
= --0.9 A, di/dt = 100 A/ms
GS
GS
I
V
DS
S
V
V
DS
Test Condition
DS
DD
DD
DS
= --0.9 A, V
 --5 V, V
= --4.5 V, I
= --2.5 V, I
= --1.8 V, I
= --9.6 V, V
= --5 V, I
= V
= --6 V, R
= --6 V, R
= 0 V, V
GEN
GS
GS
GS
= --4.5 V, I
, I
= --4.5 V, R
D
= 0 V, T
GS
D
GS
D
D
D
GS
= --1 mA
= --3.1 A
L
L
GS
= --2.5 A
= --1.0 A
= --3.1 A
= --4.5 V
= 6 Ω
= 6 Ω
= 8 V
= 0 V
= 0 V
D
J
10
= 85_C
G
= --3.1 A
8
6
4
2
0
= 6 Ω
0.0
0.5
V
GS
Transfer Characteristics
--0.45
Min
--10
-- Gate-to-Source Voltage (V)
1.0
T
25_C
0.070
0.100
0.131
C
Typ
--0.8
1.5
5.7
1.2
1.2
10
20
31
26
40
= --55_C
8
S-21251—Rev. B, 05-Aug-02
Document Number: 71320
2.0
100
Max
0.086
0.127
0.164
--1.2
--1
--5
15
30
45
40
60
9
125_C
2.5
Unit
nA
mA
mA
nC
ns
Ω
V
A
S
V
3.0