74aup1gu04gw NXP Semiconductors, 74aup1gu04gw Datasheet

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74aup1gu04gw

Manufacturer Part Number
74aup1gu04gw
Description
Low-power Unbuffered Inverter
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
74AUP1GU04GW
Manufacturer:
NXP
Quantity:
3 000
1. General description
2. Features
3. Ordering information
Table 1.
Type number
74AUP1GU04GW
74AUP1GU04GM
74AUP1GU04GF
Ordering information
Package
Temperature range Name
40 C to +125 C
40 C to +125 C
40 C to +125 C
The 74AUP1GU04 is a high-performance, low-power, low-voltage, Si-gate CMOS device,
superior to most advanced CMOS compatible families.
This device ensures a very low static and dynamic power consumption across the entire
V
The 74AUP1GU04 provides the single unbuffered inverting gate.
CC
74AUP1GU04
Low-power unbuffered inverter
Rev. 02 — 3 August 2006
Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
ESD protection:
Low static power consumption; I
Latch-up performance exceeds 100 mA per JESD 78 Class II
Inputs accept voltages up to 3.6 V
Multiple package options
Specified from 40 C to +85 C and 40 C to +125 C
range from 0.8 V to 3.6 V.
HBM JESD22-A114-C Class 3A. Exceeds 5000 V
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101-C exceeds 1000 V
TSSOP5
XSON6
XSON6
Description
plastic thin shrink small outline package; 5 leads;
body width 1.25 mm
plastic extremely thin small outline package; no leads;
6 terminals; body 1
plastic extremely thin small outline package; no leads;
6 terminals; body 1
CC
= 0.9 A (maximum)
1.45
1
0.5 mm
0.5 mm
Product data sheet
Version
SOT353-1
SOT886
SOT891

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74aup1gu04gw Summary of contents

Page 1

... Latch-up performance exceeds 100 mA per JESD 78 Class II Inputs accept voltages up to 3.6 V Multiple package options Specified from +85 C and +125 C 3. Ordering information Table 1. Ordering information Type number Package Temperature range Name 74AUP1GU04GW +125 C 74AUP1GU04GM +125 C 74AUP1GU04GF +125 C = 0.9 A (maximum) CC Description TSSOP5 plastic thin shrink small outline package ...

Page 2

... Philips Semiconductors 4. Marking Table 2. Marking Type number 74AUP1GU04GW 74AUP1GU04GM 74AUP1GU04GF 5. Functional diagram mna108 Fig 1. Logic symbol 6. Pinning information 6.1 Pinning 74AUP1GU04 n. GND Y 001aaf167 Fig 4. Pin configuration SOT353-1 (TSSOP5) 74AUP1GU04_2 Product data sheet Marking code pD pD ...

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Philips Semiconductors 6.2 Pin description Table 3. Pin description Symbol Pin TSSOP5 n. GND n. Functional description [1] Table 4. Function table Input [ ...

Page 4

Philips Semiconductors 9. Recommended operating conditions Table 6. Recommended operating conditions Symbol Parameter V supply voltage CC V input voltage I V output voltage O T ambient temperature amb t/ V input transition rise and fall rate 10. Static characteristics ...

Page 5

Philips Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter +85 C amb V HIGH-level input voltage IH V LOW-level input voltage IL V ...

Page 6

Philips Semiconductors Table 7. Static characteristics At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter V LOW-level output voltage OL I input leakage current I I supply current CC 11. Dynamic characteristics Table 8. ...

Page 7

Philips Semiconductors Table 8. Dynamic characteristics Voltages are referenced to GND (ground = 0 V); for test circuit see Symbol Parameter Conditions propagation delay see ...

Page 8

Philips Semiconductors 12. Waveforms Measurement points are given in Logic levels: V and V are typical output voltage drop that occur with the output load Fig 7. The data input (A) to output (Y) propagation delays Table 9. ...

Page 9

Philips Semiconductors 13. Additional characteristics -------- - constant. O Fig 9. Test set-up for measuring forward transconductance amb Fig 10. Typical forward transconductance as a function of ...

Page 10

Philips Semiconductors 14. Application information Some applications for the 74AUP1GU04 are: • Linear amplifier (see • Crystal oscillator (see Remark: All values given are typical values unless otherwise specified. Fig 11. Linear amplifier application Fig 12. Crystal oscillator application 74AUP1GU04_2 ...

Page 11

Philips Semiconductors 15. Package outline TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1. DIMENSIONS (mm are the original dimensions UNIT max. ...

Page 12

Philips Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1. (2) terminal 1 index area DIMENSIONS (mm are the original dimensions) ( UNIT ...

Page 13

Philips Semiconductors XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 0 terminal 1 index area DIMENSIONS (mm are the original dimensions UNIT b D max ...

Page 14

Philips Semiconductors 16. Abbreviations Table 11. Abbreviations Acronym Description CDM Charged Device Model CMOS Complementary Metal Oxide Semiconductor DUT Device Under Test ESD ElectroStatic Discharge HBM Human Body Model MM Machine Model TTL Transistor-Transistor Logic 17. Revision history Table 12. ...

Page 15

Philips Semiconductors 18. Legal information 18.1 Data sheet status [1][2] Document status Product status Objective [short] data sheet Development Preliminary [short] data sheet Qualification Product [short] data sheet Production [1] Please consult the most recently issued document before initiating or ...

Page 16

Philips Semiconductors 20. Contents 1 General description . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . . . . . . ...

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