nlu1gt86 ON Semiconductor, nlu1gt86 Datasheet - Page 2

• Manufacturer Part Number: nlu1gt86
• Description: Single 2 Input Exclusive Or Gate, Ttl Level
• Manufacturer: ON Semiconductor

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm-by-1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA / JESD22-A114-A.
3. Tested to EIA / JESD22-A115-A.
4. Tested to JESD22-C101-A.
5. Tested to EIA / JESD78.
RECOMMENDED OPERATING CONDITIONS
MAXIMUM RATINGS
I
Symbol
Symbol
LATCHUP
Dt/DV
V
V
V
T
I
MSL
V
V
V
I
I
GND
q
V
P
F
OUT
I
STG
T
T
ESD
OUT
T
OK
I
CC
CC
IK
JA
CC
O
IN
IN
D
R
A
L
J
Positive DC Supply Voltage
Digital Input Voltage
Output Voltage
Operating Free-Air Temperature
Input Transition Rise or Fail Rate
DC Supply Voltage
DC Input Voltage
DC Output Voltage
DC Input Diode Current
DC Output Diode Current
DC Output Source/Sink Current
DC Supply Current Per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Thermal Resistance (Note 1)
Power Dissipation in Still Air at 85°C
Moisture Sensitivity
Flammability Rating
ESD Withstand Voltage
Latchup Performance Above V
CC
and Below GND at 125°C (Note 5)
Parameter
Parameter
Charged Device Model (Note 4)
Human Body Mode (Note 2)
http://onsemi.com
NLU1GT86
Machine Model (Note 3)
Oxygen Index: 28 to 34
V
V
CC
CC
2
= 3.3 V ± 0.3 V
= 5.0 V ± 0.5 V
V
OUT
V
IN
UDFN6
UDFN6
< GND
< GND
UL 94 V-0 @ 0.125 in
1.65
Min
-55
0
0
0
0
-0.5 to +7.0
-0.5 to +7.0
-0.5 to +7.0
-65 to +150
Level 1
> 2000
Value
±12.5
> 150
±500
TBD
TBD
TBD
TBD
-20
±20
±25
±25
N/A
+125
Max
100
5.5
5.5
5.5
20
°C/W
ns/V
Unit
Unit
mW
mA
mA
mA
mA
mA
mA
°C
°C
°C
°C
V
V
V
V
V
V
V