nlu1gt86 ON Semiconductor, nlu1gt86 Datasheet - Page 3
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nlu1gt86
Manufacturer Part Number
nlu1gt86
Description
Single 2 Input Exclusive Or Gate, Ttl Level
Manufacturer
ON Semiconductor
Datasheet
1.NLU1GT86.pdf
(5 pages)
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6. C
DC ELECTRICAL CHARACTERISTICS
Symbol
AC ELECTRICAL CHARACTERISTICS
Symbol
load. Average operating current can be obtained by the equation I
dynamic power consumption: P
I
t
V
I
t
V
C
PLH
V
I
CCT
OPD
C
V
PHL
I
CC
PD
OH
IN
OL
PD
IH
IN
IL
,
is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
Low-Level Input
Voltage
Low-Level Input
Voltage
High-Level Output
Voltage
Low-Level Output
Voltage
Input Leakage
Current
Quiescent Supply
Current
Quiescent Supply
Current
Output Leakage
Current
Propagation Delay, Input A to
Output Y
Input Capacitance
Power Dissipation
Capacitance (Note 6)
Parameter
Parameter
D
= C
PD
V
I
V
I
I
V
I
V
I
I
0 v V
0 v V
V
V
OH
OH
OH
OL
OL
OL
IN
IN
IN
IN
IN
OUT
Conditions
• V
= 50 mA
= 4 mA
= 8 mA
= V
= V
= V
= V
= 3.4 V
= -50 mA
= -4 mA
= -8 mA
= 5.5 V
CC
IN
IN
(Input t
IH
IH
IH
IH
3.0 to
4.5 to
V
2
v 5.5 V
v V
3.6
5.5
5.0
(V)
or V
or V
or V
or V
CC
• f
in
CC
IL
IL
IL
IL
r
+ I
= t
CC
http://onsemi.com
C
C
C
C
f
Condition
= 3.0 ns)
L
L
L
L
• V
4.5 to 5.5
4.5 to 5.5
Test
= 15 pF
= 50 pF
= 15 pF
= 50 pF
NLU1GT86
V
0 to 5.5
CC
CC.
3.0
3.0
3.0
4.5
3.0
4.5
3.0
4.5
3.0
4.5
5.5
5.5
0.0
(V)
CC(OPR)
3
Min
2.58
3.94
Min
1.4
2.0
2.9
4.4
= C
T
T
A
PD
A
= 25 5C
Typ
5.0
6.2
3.1
4.2
5.5
= 25 5C
11
Typ
3.0
4.5
0.0
0.0
• V
CC
• f
Max
11.0
14.5
6.8
8.8
Max
0.53
0.36
0.36
±0.1
1.35
10
0.8
0.1
0.1
1.0
0.5
in
+ I
CC
Min
2.48
3.80
T
Min
. C
T
1.4
2.0
2.9
4.4
A
A
= +855C
PD
= +855C
is used to determine the no-load
Max
13.0
16.5
10.0
Max
0.53
0.44
0.44
±1.0
1.50
6.0
0.8
0.1
0.1
5.0
10
20
2.34
3.66
Min
Min
T
T
1.4
2.0
2.9
4.4
to +1255C
to +1255C
A
A
= -555C
= -555C
Max
15.5
19.5
10.0
12.0
10.0
Max
0.53
0.52
0.52
±1.0
1.65
0.8
0.1
0.1
40
10
Unit
Unit
mA
mA
mA
mA
pF
pF
ns
V
V
V
V