at25df161 ATMEL Corporation, at25df161 Datasheet

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at25df161

Manufacturer Part Number
at25df161
Description
16-megabit 2.7-volt Minimum Spi Serial Flash Memory
Manufacturer
ATMEL Corporation
Datasheet

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Features
1. Description
The AT25DF161 is a serial interface Flash memory device designed for use in a wide
variety of high-volume consumer based applications in which program code is shad-
owed from Flash memory into embedded or external RAM for execution. The flexible
erase architecture of the AT25DF161, with its erase granularity as small as 4-Kbytes,
makes it ideal for data storage as well, eliminating the need for additional data storage
EEPROM devices.
Single 2.7V - 3.6V Supply
Serial Peripheral Interface (SPI) Compatible
Very High Operating Frequencies
Flexible, Optimized Erase Architecture for Code + Data Storage Applications
Individual Sector Protection with Global Protect/Unprotect Feature
Hardware Controlled Locking of Protected Sectors via WP Pin
Sector Lockdown
128-Byte Programmable OTP Security Register
Flexible Programming
Fast Program and Erase Times
Program and Erase Suspend/Resume
Automatic Checking and Reporting of Erase/Program Failures
Software Controlled Reset
JEDEC Standard Manufacturer and Device ID Read Methodology
Low Power Dissipation
Endurance: 100,000 Program/Erase Cycles
Data Retention: 20 Years
Complies with Full Industrial Temperature Range
Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options
– Supports SPI Modes 0 and 3
– Supports RapidS
– Supports Dual-Input Program and Dual-Output Read
– 100 MHz for RapidS
– 85 MHz for SPI
– Clock-to-Output (t
– Uniform 4-Kbyte Block Erase
– Uniform 32-Kbyte Block Erase
– Uniform 64-Kbyte Block Erase
– Full Chip Erase
– 32 Sectors of 64-Kbytes Each
– Make Any Combination of 64-Kbyte Sectors Permanently Read-Only
– Byte/Page Program (1 to 256 Bytes)
– 1.0 ms Typical Page Program (256 Bytes) Time
– 50 ms Typical 4-Kbyte Block Erase Time
– 250 ms Typical 32-Kbyte Block Erase Time
– 400 ms Typical 64-Kbyte Block Erase Time
– 5 mA Active Read Current (Typical at 20 MHz)
– 5 µA Deep Power-Down Current (Typical)
– 8-lead SOIC (150-mil and 208-mil wide)
– 8-pad Ultra Thin DFN (5 x 6 x 0.6 mm)
®
V
Operation
) of 5 ns Maximum
16-Megabit
2.7-volt
Minimum
SPI Serial Flash
Memory
AT25DF161
Preliminary
3687B–DFLASH–11/08

Related parts for at25df161

at25df161 Summary of contents

Page 1

... Ultra Thin DFN ( 0.6 mm) 1. Description The AT25DF161 is a serial interface Flash memory device designed for use in a wide variety of high-volume consumer based applications in which program code is shad- owed from Flash memory into embedded or external RAM for execution. The flexible ...

Page 2

... To take code and data protection to the next level, the AT25DF161 incorporates a sector lock- down mechanism that allows any combination of individual 64-Kbyte sectors to be locked down and become permanently read-only. This addresses the need of certain secure applications that ...

Page 3

... WP pin. WP The WP pin is internally pulled-high and may be left floating if hardware controlled protection will not be used. However recommended that the WP pin also be externally connected to V whenever possible. CC 3687B–DFLASH–11/08 AT25DF161 [Preliminary] Asserted for more details on protection State Type Low Input - ...

Page 4

... GROUND: The ground reference for the power supply. GND should be connected to the GND system ground. Figure 2-1. 8-SOIC (Top View (SOI GND 4 AT25DF161 [Preliminary] 4 pin is used to supply the source voltage to the device. CC voltages may produce spurious results and should not be Figure 2-2. VCC 8 HOLD 7 SCK 6 SI (SIO) ...

Page 5

... HOLD 4. Memory Array To provide the greatest flexibility, the memory array of the AT25DF161 can be erased in four lev- els of granularity including a full chip erase. In addition, the array has been divided into physical sectors of uniform size, of which each sector can be individually protected from program and erase operations ...

Page 6

... Figure 4-1. Memory Architecture Diagram AT25DF161 [Preliminary] 6 3687B–DFLASH–11/08 ...

Page 7

... All opcode, address, and data bytes are trans- ferred with the most-significant bit (MSB) first. An operation is ended by deasserting the CS pin. Opcodes not supported by the AT25DF161 will be ignored by the device and no operation will be started. The device will continue to ignore any data presented on the SI pin until the start of the next operation (CS pin being deasserted and then reasserted) ...

Page 8

... Status Register Commands Read Status Register Write Status Register Byte 1 Write Status Register Byte 2 Miscellaneous Commands Reset Read Manufacturer and Device ID Deep Power-Down Resume from Deep Power-Down AT25DF161 [Preliminary] 8 Clock Opcode Frequency 1Bh 0001 1011 Up to 100 MHz 0Bh 0000 1011 ...

Page 9

... ADDRESS BITS A23-A0 DON'T CARE MSB AT25DF161 [Preliminary] ; however, use of the 1Bh opcode at clock MAX DON'T CARE ...

Page 10

... SIO pin. During the next clock cycle, bits 5 and 4 of the first data byte will be output on the SO and SIO pins, respectively. The sequence continues with each byte of data being output after every four clock cycles. When the last byte (1FFFFFh) of the memory array has been read, AT25DF161 [Preliminary ...

Page 11

... HIGH-IMPEDANCE SO 3687B–DFLASH–11/ ADDRESS BITS A23- MSB MSB AT25DF161 [Preliminary OUTPUT OUTPUT DON'T CARE DATA BYTE 1 DATA BYTE ...

Page 12

... The device also incorporates an intelligent programming algorithm that can detect when a byte location fails to program properly programming error arises, it will be indicated by the EPE bit in the Status Register. AT25DF161 [Preliminary] 12 “Write Enable” on page 21) to set the Write Enable Latch (WEL) bit only programming a single byte ...

Page 13

... MSB ADDRESS BITS A23-A0 DATA IN BYTE MSB MSB AT25DF161 [Preliminary DATA MSB DATA IN BYTE ...

Page 14

... The device also incorporates an intelligent programming algorithm that can detect when a byte location fails to program properly programming error arises, it will be indicated by the EPE bit in the Status Register. Figure 8-3. SCK AT25DF161 [Preliminary only programming a single byte “ ...

Page 15

... ADDRESS BITS A23- MSB BLKE AT25DF161 [Preliminary INPUT INPUT INPUT DATA BYTE 1 DATA BYTE 2 DATA BYTE ...

Page 16

... WEL bit in the Status Register will be reset back to the logical “0” state. The device also incorporates an intelligent erase algorithm that can detect when a byte location fails to erase properly erase error occurs, it will be indicated by the EPE bit in the Status Register. AT25DF161 [Preliminary] 16 Block Erase CS 0 ...

Page 17

... A program operation is not allowed to a sector that has been erase suspended program operation is attempted to an erase suspended sector, then the program operation will abort and the WEL bit in the Status Register will be reset back to the logical “0” state. Likewise, an erase 3687B–DFLASH–11/08 AT25DF161 [Preliminary] Chip Erase CS 0 ...

Page 18

... Protect Sector operation, then the device will simply ignore the opcode and no operation will be performed. The state of the WEL bit in the Status Register, as well as the SPRL (Sector Protection Registers Locked) and SLE (Sector Lockdown Enabled) bits, will not be affected. AT25DF161 [Preliminary] 18 “Reset” on page 42) is performed while a sector is erase suspended, ...

Page 19

... Write Status Register (All Opcodes) Miscellaneous Commands Reset Read Manufacturer and Device ID Deep Power-Down Resume from Deep Power-Down 3687B–DFLASH–11/08 AT25DF161 [Preliminary] Operations Allowed and Not Allowed During a Program or Erase Suspend Operation During Operation During Program Suspend Erase Suspend Allowed ...

Page 20

... Program/Erase Suspend command must check the status of RES the RDY/BSY bit or the appropriate bit in the Status Register to determine if the previ- ously suspended program or erase operation has resumed. AT25DF161 [Preliminary] 20 Program/Erase Suspend ...

Page 21

... CS pin is deasserted, and the CS pin must be deasserted on an even byte boundary (multiples of eight bits); otherwise, the device will abort the operation and the state of the WEL bit will not change. Figure 9-1. 3687B–DFLASH–11/08 AT25DF161 [Preliminary] Program/Erase Resume ...

Page 22

... Any additional data clocked into the device will be ignored. When the CS pin is deasserted, the Sector Protection Register corresponding to the physical sector addressed by AT25DF161 [Preliminary] 22 Write Disable ...

Page 23

... WEL bit in the Status Register will be reset to a logical “0”. 3687B–DFLASH–11/08 Protect Sector SCK OPCODE MSB HIGH-IMPEDANCE SO AT25DF161 [Preliminary ADDRESS BITS A23- MSB Table 9-1 ...

Page 24

... Global Protect operation is attempted while a sector is erase or program suspended, the protec- tion operation will abort, the protection states of all sectors in the Flash memory array will not change, and WEL bit in the Status Register will be reset back to a logical “0”. AT25DF161 [Preliminary] 24 Unprotect Sector ...

Page 25

... SPRL bit can be changed back from a 1 since the WP ↕ pin is HIGH. To perform a Global Protect/Unprotect, the Write Status Register command must be issued again after the SPRL bit has been changed from AT25DF161 [Preliminary] New SPRL Value ...

Page 26

... In addition to reading the individual Sector Protection Registers, the Software Protection Status (SWP) bits in the Status Register can be read to determine if all, some, or none of the sectors are software protected (refer to AT25DF161 [Preliminary] 26 and Table 11-1 on page 36 , the first byte of data output will not be valid. Therefore, if operat- ...

Page 27

... OPCODE ADDRESS BITS A23- MSB MSB HIGH-IMPEDANCE 9-4 and 9-5 detail the various protection and locking states of the device. AT25DF161 [Preliminary DATA BYTE MSB 37 38 ...

Page 28

... Table 9-4. (Don't Care) Note: Table 9- AT25DF161 [Preliminary] 28 Sector Protection Register States Sector Protection Register “n” represents a sector number Hardware and Software Locking SPRL Locking SPRL Change Allowed 0 Can be modified from Hardware 1 Locked Locked 0 Can be modified from ...

Page 29

... Sector Lockdown Status Sector is not locked down and can be programmed and erased. This is the default state. Sector is permanently locked down and can never be programmed or erased again. 41). To issue the Sector Lockdown command, the CS pin must first be AT25DF161 [Preliminary] “Write Status Reg LOCK ...

Page 30

... When the device aborts the Freeze Sector Lockdown State operation, the WEL bit in the Status Register will be reset to a logical “0”; however, the state of the SLE bit will be unchanged. AT25DF161 [Preliminary ...

Page 31

... Sector Lockdown Register value is 1 (sector is permanently locked down ADDRESS BITS A23- MSB MSB AT25DF161 [Preliminary ADDRESS BITS A23-A0 CONFIRMATION BYTE ...

Page 32

... OTP Security Register locations based on the starting address specified by A23-A0 and the number of data bytes sent to the device. If less than 64 bytes of data were sent to the device, then the remaining bytes within the OTP Security Register will not AT25DF161 [Preliminary] 32 OTP Security Register ...

Page 33

... ADDRESS BITS A23-A0 DATA IN BYTE MSB MSB AT25DF161 [Preliminary not possible to suspend the OTPP time to determine if the data bytes have finished OTPP DATA IN BYTE ...

Page 34

... The CS pin can be deasserted at any time and does not require that a full byte of data be read. Figure 10-5. Read OTP Security Register SCK OPCODE MSB HIGH-IMPEDANCE SO AT25DF161 [Preliminary ADDRESS BITS A23- MSB MSB ...

Page 35

... Deasserting the CS pin will terminate the Read Status Register operation and put the SO pin into a high-impedance state. The CS pin can be deasserted at any time and does not require that a full byte of data be read. 3687B–DFLASH–11/08 AT25DF161 [Preliminary] , the first two bytes of data output from the Status Register will CLK , at least four bytes of data ...

Page 36

... WEL Write Enable Latch Status 0 RDY/BSY Ready/Busy Status Notes: 1. Only bit 7 of Status Register Byte 1 will be modified when using the Write Status Register Byte 1 command. 2. R/W = Readable and writeable R = Readable only AT25DF161 [Preliminary] 36 (2) Type Description 0 Sector Protection Registers are unlocked (default). R/W 1 Sector Protection Registers are locked ...

Page 37

... If at least one byte during the erase or program operation did not erase or program properly, then the EPE bit will be set to the logical “1” state. The EPE bit will not be set if an erase or pro- 3687B–DFLASH–11/08 AT25DF161 [Preliminary] (2) Type ...

Page 38

... Reset command is disabled and any attempts to reset the device using the Reset command will be ignored. When the RSTE bit is in the logical “1” state, the Reset command is enabled. AT25DF161 [Preliminary] 38 3687B–DFLASH–11/08 ...

Page 39

... STATUS REGISTER BYTE MSB MSB AT25DF161 [Preliminary STATUS REGISTER STATUS REGISTER BYTE 2 BYTE MSB ...

Page 40

... Byte 1 command will be ignored, and the WEL bit in the Status Register will be reset back to the logical “0” state. In order to reset the SPRL bit to a logical “0”, the WP pin must be deasserted. Table 11-3. Bit 7 SPRL Figure 11-2. Write Status Register Byte 1 AT25DF161 [Preliminary] 40 “Global Protect/Unprotect” on page 24 Write Status Register Byte 1 Format Bit 6 Bit 5 ...

Page 41

... WEL bit in the Status Register will be reset back to the logical “0” state. Table 11-4. Bit 7 X Figure 11-3. Write Status Register Byte 2 3687B–DFLASH–11/08 AT25DF161 [Preliminary] Table 11-4). Any additional data bytes that are sent to the device will be Write Status Register Byte 2 Format Bit 6 Bit 5 ...

Page 42

... The complete opcode and confirmation byte must be clocked into the device before the CS pin is deasserted, and the CS pin must be deasserted on an even byte boundary (multiples of eight bits); otherwise, no Reset operation will be performed. Figure 12-1. Reset AT25DF161 [Preliminary ...

Page 43

... Density Code Product Version Code AT25DF161 [Preliminary] Hex Bit 0 Value Details 1Fh JEDEC Code: 0001 1111 (1Fh for Atmel) 1 Family Code: 010 (AT25DF/26DFxxx series) 46h Density Code: 00110 (16-Mbit)) 0 Sub Code: 000 (Standard series) 02h ...

Page 44

... The Deep Power-Down command will be ignored if an internally self-timed operation such as a program or erase cycle is in progress. The Deep Power-Down command must be reissued after the internally self-timed operation has been completed in order for the device to enter the Deep Power-Down mode. AT25DF161 [Preliminary ...

Page 45

... If the complete opcode is not clocked in before the CS pin is deasserted the CS pin is not deasserted on an even byte boundary (multiples of eight bits), then the device will abort the operation and return to the Deep Power-Down mode. Figure 12-4. Resume from Deep Power-Down 3687B–DFLASH–11/08 AT25DF161 [Preliminary ...

Page 46

... If the CS pin is deasserted while the HOLD pin is still asserted, then any operation that may have been started will be aborted, and the device will reset the WEL bit in the Status Register back to the logical “0” state. Figure 12-5. Hold Mode CS SCK HOLD AT25DF161 [Preliminary] 46 Hold Hold Hold 3687B–DFLASH–11/08 ...

Page 47

... SCK, the host controller should wait until the next falling edge of SCK to latch the data in. Similarly, the host controller should clock its data out on the rising edge of SCK in order to give the AT25DF161 a full clock cycle to latch the incoming data in on the next rising edge of SCK. ...

Page 48

... LI I Output Leakage Current LO V Input Low Voltage IL V Input High Voltage IH V Output Low Voltage OL V Output High Voltage OH AT25DF161 [Preliminary] 48 *NOTICE: + 0.5V CC Ind. Condition CS, WP, HOLD = all inputs at CMOS levels CS, WP, HOLD = all inputs at CMOS levels f = 100 MHz ...

Page 49

... Sector Protect Time (from Chip Select High) SECP (1) t Sector Unprotect Time (from Chip Select High) SECUP (1) t Sector Lockdown and Freeze Sector Lockdown State Time (from Chip Select High) LOCK 3687B–DFLASH–11/08 Maximum Clock Frequencies AT25DF161 [Preliminary] Min Min 4.3 4.3 0.1 0 ...

Page 50

... Not 100% tested (value guaranteed by design and characterization). 14.7 Power-up Conditions Symbol Parameter t Minimum V to Chip Select Low Time VCSL CC t Power-up Device Delay Before Program or Erase Allowed PUW V Power-on Reset Voltage POR AT25DF161 [Preliminary] 50 Min Min Typ 4 Kbytes 32 Kbytes 64 Kbytes Program Erase Program Erase Min Max Units 1 µ ...

Page 51

... Input Test Waveforms and Measurement Levels DRIVING LEVELS t R 14.9 Output Test Load 3687B–DFLASH–11/ < (10% to 90%) F DEVICE UNDER TEST 15 pF (frequencies above 70 MHz) or 30pF AT25DF161 [Preliminary MEASUREMENT LEVEL 51 ...

Page 52

... Figure 15-2. Serial Output Timing CS SCK Figure 15-3. WP Timing for Write Status Register Byte 1 Command When SPRL = WPS WP SCK SI 0 MSB OF WRITE STATUS REGISTER BYTE 1 OPCODE HIGH-IMPEDANCE SO AT25DF161 [Preliminary CSLH t t CLKH CLKL t DH LSB t CLKH WPH 0 ...

Page 53

... Figure 15-4. HOLD Timing – Serial Input CS SCK HOLD SI HIGH-IMPEDANCE SO Figure 15-5. HOLD Timing – Serial Output CS SCK t HHH HOLD SI SO 3687B–DFLASH–11/ HHH HLS t HLH t HLS t HLH t t HLQZ AT25DF161 [Preliminary] t HHS t HHS HHQX 53 ...

Page 54

... Body), Thermally Enhanced Plastic Ultra Thin Dual Flat No Lead Package (UDFN) 8S1 8-lead, 0.150” Wide, Plastic Gull Wing Small Outline Package (JEDEC SOIC) 8S2 8-lead, 0.208” Wide, Plastic Gull Wing Small Outline Package (EIAJ SOIC) AT25DF161 [Preliminary – ...

Page 55

... D TOP VIEW Pin #1 Notch (0.20 R) (Option BOTTOM VIEW L Package Drawing Contact: packagedrawings@atmel.com 3687B–DFLASH–11/08 AT25DF161 [Preliminary] A 0.45 Option A Pin #1 1 Chamfer (C 0.35) SYMBOL TITLE 8MA1, 8-pad ( 0.6 mm Body), Thermally Enhanced Plastic Ultra Thin Dual Flat No Lead Package (UDFN) ...

Page 56

... JEDEC SOIC TOP VIEW e e SIDE VIEW Note: These drawings are for general information only. Refer to JEDEC Drawing MS-012, Variation AA for proper dimensions, tolerances, datums, etc. 1150 E. Cheyenne Mtn. Blvd. Colorado Springs, CO 80906 R AT25DF161 [Preliminary ...

Page 57

... TOP VIEW TOP VIEW SIDE VIEW SIDE VIEW TITLE 8S2, 8-lead, 0.208” Body, Plastic Small Outline Package (EIAJ) AT25DF161 [Preliminary θ θ END VIEW END VIEW COMMON DIMENSIONS (Unit of Measure = mm) MIN NOM MAX SYMBOL A 1 ...

Page 58

... Revision History Revision Level – Release Date A – April 2008 B – November 2008 AT25DF161 [Preliminary] 58 History Initial release. Changed Standby Current value – Increased maximum value from 35 µ µA Changed Deep Power-Down Current values – Increased typical value from 1 µ µA – ...

Page 59

... Atmel products are not suitable for, and shall not be used in, automotive applications. Atmel’s products are not intended, authorized, or warranted for use as components in applications intended to support or sustain life. © 2008 Atmel Corporation. All rights reserved. Atmel marks or trademarks of Atmel Corporation or its subsidiaries. Other terms and product names may be trademarks of others. International Atmel Asia ...

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