is62u6416ll Integrated Silicon Solution, Inc., is62u6416ll Datasheet

is62u6416ll

Manufacturer Part Number

is62u6416ll

Description

64k X 16 Low Voltage, Ultra-low Power Cmos Static Ram Inc

Manufacturer

Integrated Silicon Solution, Inc.

Datasheet

1.IS62U6416LL.pdf (9 pages)

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IS62U6416LL

FEATURES

• Access time: 200 ns

• CMOS low power operation

• TTL compatible interface levels

• Single 1.8V-2.7V power supply

• Fully static operation: no clock or refresh

• Three state outputs

• Data control for upper and lower bytes

• Industrial temperature available

• Available in Jedec Std 44-pin SOJ package,

FUNCTIONAL BLOCK DIAGRAM

The specification contains ADVANCE INFORMATION. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible

Integrated Silicon Solution, Inc. — 1-800-379-4774

ADVANCE INFORMATION

12/09/98

IS62U6416LL

64K x 16 LOW VOLTAGE,

ULTRA-LOW POWER CMOS STATIC RAM

– 40 mW (typical) operating

– 90 W (typical) standby

required

44-pin TSOP (Type II), and 48-pin mini BGA

SR034-0C

Lower Byte

Upper Byte

I/O8-I/O15

I/O0-I/O7

A0-A15

VCC

GND

DECODER

CIRCUIT

CONTROL

CIRCUIT

DATA

I/O

DESCRIPTION

The

static RAM organized as 65,536 words by 16 bits. It is

fabricated using

This highly reliable process coupled with innovative circuit

design techniques yields access times as fast as 200 ns with

low power consumption.

When

mode at which the power dissipation can be reduced down

with CMOS input levels.

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs,

Enable (

A data byte allows Upper Byte (

access.

ISSI

is HIGH (deselected), the device assumes a standby

IS62U6416LL is an ultra-low power, 1,048,576-bit

) controls both writing and reading of the memory.

MEMORY ARRAY

COLUMN I/O

ISSI

64K x 16

's high-performance CMOS technology.

and

ADVANCE INFORMATION

) and Lower Byte (

DECEMBER 1998

. The active LOW Write

ISSI

)

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