is42s32800g-7bli Integrated Silicon Solution, Inc., is42s32800g-7bli Datasheet - Page 13

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is42s32800g-7bli

Manufacturer Part Number
is42s32800g-7bli
Description
8m X 32 256mb Synchronous Dram
Manufacturer
Integrated Silicon Solution, Inc.
Datasheet
DC RECOMMENDED OPERATING CONDITIONS
(T
Symbol
IS42S32800G, IS45S32800G
ABSOLUTE MAXIMUM RATINGS
Note:
1. V
2. V
3. All voltages are referenced to Vss.
CAPACITANCE CHARACTERISTICS
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to
2. All voltages are referenced to Vss.
Integrated Silicon Solution, Inc. - www.issi.com
Rev. 00A
07/12/2010
a
Symbol
V
V
V
V
P
I
T
T
Symbol
C
C
C
the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect reliability.
= 0
cs
opr
out
stg
ih
il
dd max
ddq max
in
d max
in1
in2
i
/
V
V
o
V
o
V
(min) = -1.2V (
(max) = V
C to +70
ddq
ih
il
dd
(2)
(1)
o
ddq
C for Commercial grade. T
Parameter
Input Capacitance: CLK
Input Capacitance:All other input pins
Data Input/Output Capacitance:I/Os
Parameter
Supply Voltage
I/O Supply Voltage
Input High Voltage
Input Low Voltage
+1.2V (
Parameters
Maximum Supply Voltage
Maximum Supply Voltage for Output Buffer
Input Voltage
Output Voltage
Allowable Power Dissipation
output Shorted Current
operating Temperature
Storage Temperature
pulse width
pulse width
< 3
ns
).
< 3
a
ns
= -40
).
(1)
o
C to +85
(At T
a
= 0 to +25°C, V
o
C for Industrial and A1 grade. T
A2
Com.
Ind.
A1
Min.
-0.3
3.0
3.0
2.0
Min.
2.5
2.5
4.0
-1.0 to V
-0.5 to V
dd
Typ.
3.3
3.3
-0.5 to +4.6
-0.5 to +4.6
-40 to +105
-65 to +150
-40 to +85
-40 to +85
0 to +70
= V
Rating
50
1
ddq
ddq
dd
+ 0.5
+ 0.5
= 3.3 ± 0.3V)
V
ddq
a
Max.
+0.8
= -40
3.6
3.6
3.5
3.8
6.5
-6
+ 0.3
Max.
o
Unit
C to +105
mA
°C
°C
W
V
V
V
V
Unit
4.0
5.0
6.5
V
V
V
V
-7
o
C for A2 grade.)
Unit
pF
pF
pF
13

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