is42sm16800g-6bli Integrated Silicon Solution, Inc., is42sm16800g-6bli Datasheet

is42sm16800g-6bli

Manufacturer Part Number

is42sm16800g-6bli

Description

2m X 16bits X 4banks Mobile Synchronous Dram

Manufacturer

Integrated Silicon Solution, Inc.

Datasheet

1.IS42SM16800G-6BLI.pdf (33 pages)

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products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services

described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information

and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or

malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or

effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to

its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

 JEDEC standard 3.3V, 2.5V, 1.8V power supply.

• Auto refresh and self refresh.

• All pins are compatible with LVCMOS interface.

• 4K refresh cycle / 64ms.

• Programmable Burst Length and Burst Type.

• Programmable CAS Latency : 2,3 clocks.

• Programmable Driver Strength Control

• Deep Power Down Mode.

Description

bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs

are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth. All input

and output voltage levels are compatible with LVCMOS.

Features

Rev. 00A | Dec. 2010

These IS42SM/RM/VM16800G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16

- 1, 2, 4, 8 or Full Page for Sequential Burst.

- 4 or 8 for Interleave Burst.

- Full Strength or 1/2, 1/4, 1/8 of Full Strength

2M x 16Bits x 4Banks Mobile Synchronous DRAM

www.issi.com

- DRAM@issi.com

• All inputs and outputs referenced to the positive edge of the

• Data mask function by DQM.

• Internal 4 banks operation.

• Burst Read Single Write operation.

• Special Function Support.

• Automatic precharge, includes CONCURRENT Auto Precharge

system clock.

- PASR(Partial Array Self Refresh)

- Auto TCSR(Temperature Compensated Self Refresh)

Mode and controlled Precharge.

IS42SM/RM/VM16800G

Advanced Information

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