is43lr32200b-6bl Integrated Silicon Solution, Inc., is43lr32200b-6bl Datasheet - Page 26

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is43lr32200b-6bl

Manufacturer Part Number
is43lr32200b-6bl
Description
512k X 32bits X 4banks Mobile Ddr Sdram
Manufacturer
Integrated Silicon Solution, Inc.
Datasheet
Rev. 00A | Feb. 2011
Timing Diagram
Bank/row Activation
selects the bank, and the address provided on A0-A10(or the highest address bit) selects the row.
is accomplished via the ACTIVE command, which selects both the bank and the row to be activated. The row remains active until a
PRECHARGE (or READ with AUTO PRECHARGE or WRITE with AUTO PRECHARGE) command is issued to the bank.
row in the same bank.
Once a row is Open(with an ACTIVE command) a READ or WRITE command may be issued to that row, subject to the tRCD specification.
tRCD(min) should be divided by the clock period and rounded up to the next whole number to determine the earliest clock edge after the
ACTIVE command on which a READ or WRITE command can be entered.
A subsequent ACTIVE command to a different row in the same bank can only be issued after the previous active row has been
closed(precharge). The minimum time interval between successive ACTIVE commands to the same bank is defined by tRC. A subsequent
ACTIVE command to another bank can be issued while the first bank is being accessed, which results in a reduction of total row-access
overhead. The minimum time interval between successive ACTIVE commands to different banks is defined by tRRD.
Figure10 : Active command
Figure11 : tRCD, tRRD, tRC
Command
The Active command is used to activate a row in particular bank for a subsequent Read or Write access. The value of the BA0,BA1 inputs
Before any READ or WRITE commands can be issued to a bank within the Mobile DDR SDRAM, a row in that bank must be opened. This
A PRECHARGE (or READ with AUTO PRECHARGE or WRITE with AUTO PRECHARGE) command must be issued before opening a different
BA0, BA1
A0-A10
/CLK
CLK
tIS
Bank a
ROW
T0
ACT
tIH
NOP
T1
Don ’ t care
tRCD
BA 0, BA 1
A0~A10
tCK
/RAS
/CAS
/CLK
CKE
/WE
CLK
/CS
NOP
T2
www.issi.com
tCH
RA
BA
tCL
with AP
RD/WT
Bank a
COL
T3
- dram@issi.com
Don ’t care
tRC
NOP
T4
Notes :
1. RA : Row address
2. BA : Bank address
Bank b
ROW
Ta0
ACT
tRRD
Ta1
NOP
IS43/46LR32200B
Advanced Information
Bank a
Ta2
ROW
ACT
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