cy62128e Cypress Semiconductor Corporation., cy62128e Datasheet - Page 4

• Manufacturer Part Number: cy62128e
• Description: 1-mbit 128k X 8 Static Ram
• Manufacturer: Cypress Semiconductor Corporation.

Thermal Resistance
AC Test Loads and Waveforms
Data Retention Characteristics
Data Retention Waveform
Notes
Document #: 38-05485 Rev. *E
V
I
t
t
10. Full device AC operation requires linear V
11. CE is the logical combination of CE
Parameter
CCDR
CDR
R
Parameter
DR
[10]
Θ
Θ
[9]
JA
JC
OUTPUT
[8]
V
INCLUDING
CE
CC
V
JIG AND
Thermal Resistance
(Junction to Ambient)
Thermal Resistance
(Junction to Case)
CC
V
Data Retention Current
Chip Deselect to Data
Retention Time
Operation Recovery
Time
SCOPE
Parameters
CC
30 pF
for Data Retention
Description
R
V
R1
R2
Description
TH
TH
R1
[9]
1
and CE
[11]
R2
CC
Equivalent to:
2
Still Air, soldered on a 3 × 4.5 inch,
two-layer printed circuit board
ramp from V
. When CE
V
V
V
(Over the Operating Range)
CC
IN
CC(min)
t
CDR
= V
> V
OUTPUT
DR
CC
1
DR
Test Conditions
is LOW and CE
, CE
to V
- 0.2V or V
Rise Time = 1 V/ns
1
CC(min)
> V
THEVENIN
CC
DATA RETENTION MODE
> 100 µs or stable at V
Value
GND
2
1800
1.77
− 0.2V or CE
990
639
IN
3.0V
is HIGH, CE is LOW; when CE
Conditions
< 0.2V
V
EQUIVALENT
R
DR
TH
10%
> 2.0V
2
ALL INPUT PULSES
< 0.2V,
CC(min)
V
Package
90%
SOIC
48.67
25.86
> 100 µs.
Ind’l/Auto-A
1
Auto-E
is HIGH or CE
Package
STSOP
32.56
3.59
V
CC(min)
CY62128E MoBL
90%
t
R
2
Min
10%
is LOW, CE is HIGH.
t
RC
2
0
Fall Time = 1 V/ns
Unit
Ω
Ω
Ω
V
Package
Typ
TSOP
33.01
3.42
[3]
Page 4 of 11
Max
30
4
°C/W
°C/W
Unit
Unit
µA
µA
ns
ns
V
®
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