cy62147ev30 Cypress Semiconductor Corporation., cy62147ev30 Datasheet

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cy62147ev30

Manufacturer Part Number
cy62147ev30
Description
4-mbit 256k X 16 Static Ram
Manufacturer
Cypress Semiconductor Corporation.
Datasheet

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Cypress Semiconductor Corporation
Document #: 38-05440 Rev. *E
Features
Functional Description
The CY62147EV30 is a high performance CMOS static RAM
organized as 256K words by 16 bits. This device features
Logic Block Diagram
Note
1. For best practice recommendations, refer to the Cypress application note
• Very high speed: 45 ns
• Temperature ranges
• Wide voltage range: 2.20V–3.60V
• Pin compatible with CY62147DV30
• Ultra low standby power
• Ultra low active power
• Easy memory expansion with CE and OE features
• Automatic power down when deselected
• CMOS for optimum speed and power
• Offered in Pb-free 48-ball VFBGA and 44-pin TSOPII
• Byte power down feature
— Industrial: –40°C to +85°C
— Automotive-A: –40°C to +85°C
— Automotive-E: –40°C to +125°C
— Typical standby current: 1 µA
— Maximum standby current: 7 µA (Industrial)
— Typical active current: 2 mA @ f = 1 MHz
packages
POWER DOWN
CIRCUIT
A
A
A
A
A
A
A
A
A
A
A
6
5
4
3
2
1
0
10
9
8
7
[1]
CE
BHE
BLE
COLUMN DECODER
198 Champion Court
DATA IN DRIVERS
RAM Array
256K x 16
AN1064, SRAM System Guidelines.
advanced circuit design to provide ultra low active current.
This is ideal for providing More Battery Life™ (MoBL
portable applications such as cellular telephones. The device
also has an automatic power down feature that significantly
reduces power consumption when addresses are not toggling.
Placing the device into standby mode reduces power
consumption by more than 99% when deselected (CE HIGH
or both BLE and BHE are HIGH). The input and output pins
(IO
To write to the device, take Chip Enable (CE) and Write Enable
(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data
from IO pins (IO
specified on the address pins (A
Enable (BHE) is LOW, then data from IO pins (IO
IO
(A
To read from the device, take Chip Enable (CE) and Output
Enable (OE) LOW while forcing the Write Enable (WE) HIGH.
If Byte Low Enable (BLE) is LOW, then data from the memory
location specified by the address pins appear on IO
Byte High Enable (BHE) is LOW, then data from memory
appears on IO
complete description of read and write modes.
4-Mbit (256K x 16) Static RAM
• Deselected (CE HIGH)
• Outputs are disabled (OE HIGH)
• Both Byte High Enable and Byte Low Enable are disabled
• Write operation is active (CE LOW and WE LOW)
0
15
0
(BHE, BLE HIGH)
through A
) is written into the location specified on the address pins
through IO
San Jose
17
8
15
).
to IO
) are placed in a high impedance state when:
0
through IO
,
15
CA 95134-1709
. See the
IO
IO
CY62147EV30 MoBL
0
8
–IO
–IO
BHE
WE
CE
OE
BLE
7
15
7
) is written into the location
“Truth Table” on page 9
0
through A
Revised May 6, 2007
17
). If Byte High
408-943-2600
0
8
to IO
through
®
for a
) in
7
. If
®
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cy62147ev30 Summary of contents

Page 1

... CMOS for optimum speed and power • Offered in Pb-free 48-ball VFBGA and 44-pin TSOPII packages • Byte power down feature Functional Description [1] The CY62147EV30 is a high performance CMOS static RAM organized as 256K words by 16 bits. This device features Logic Block Diagram ...

Page 2

... Product Portfolio Product Range Min CY62147EV30LL Ind’l/Auto-A 2.2 CY62147EV30LL Auto-E 2.2 Pin Configurations The figure that follows show the 48-ball VFBGA and 44-pin TSOP II pinouts. 48-Ball VFBGA Top View BLE BHE ...

Page 3

... Tested initially and after any design or process changes that may affect these parameters. Document #: 38-05440 Rev. *E Output Current into Outputs (LOW) ............................ 20 mA Static Discharge Voltage .......................................... >2001V (MIL-STD-883, Method 3015) Latch up Current...................................................... >200 mA Operating Range Device + 0.3V) CCmax CY62147EV30LL Ind’l/Auto-A –40°C to +85°C + 0.3V) CCmax + 0.3V) CCmax 45 ns (Ind’l/Auto-A) [2] Min Typ 2.0 > ...

Page 4

... Figure 2. Data Retention Waveform DATA RETENTION MODE V V > 1.5V CC(min CDR > 100 µs or stable at V > 100 µ CC(min) CC(min) ® CY62147EV30 MoBL VFBGA TSOP II Unit Package Package °C °C 90% 10% Fall Time = 1 V/ns Unit Ω Ω Ω V ...

Page 5

... Test Loads and Waveforms” on page less than less than less than t LZCE HZBE LZBE HZOE , BHE, BLE, or both = V IL ® CY62147EV30 MoBL 55 ns (Auto-E) Unit Min Max ...

Page 6

... Address valid before or similar to CE and BHE, BLE transition LOW. Document #: 38-05440 Rev. *E [17, 18] Figure 3. Read Cycle No OHA Figure 4. Read Cycle No DOE DATA VALID 50% , BHE, BLE, or both = ® CY62147EV30 MoBL DATA VALID HZCE t HZOE t HZBE HIGH IMPEDANCE Page [+] Feedback ...

Page 7

... Document #: 38-05440 Rev. *E Figure 5. Write Cycle No SCE PWE DATA IN Figure 6. Write Cycle No SCE PWE DATA IN , the output remains in a high impedance state. ® CY62147EV30 MoBL Page [+] Feedback ...

Page 8

... DATA IO Document #: 38-05440 Rev. *E [21] Figure 7. Write Cycle No SCE PWE t SD DATA IN HZWE [21] Figure 8. Write Cycle No SCE PWE t HZWE t SD DATA IN ® CY62147EV30 MoBL LZWE LZWE Page [+] Feedback ...

Page 9

... Very Fine Pitch Ball Grid Array (Pb-free) 51-85087 44-pin Thin Small Outline Package II (Pb-free) 51-85150 48-ball Very Fine Pitch Ball Grid Array (Pb-free) 51-85087 44-pin Thin Small Outline Package II (Pb-free) ® CY62147EV30 MoBL Power Standby ( Standby ( Active (I ...

Page 10

... Figure 9. 48-Ball VFBGA ( mm), 51-85150 TOP VIEW A1 CORNER 6.00±0.10 SEATING PLANE C Document #: 38-05440 Rev. *E CY62147EV30 MoBL BOTTOM VIEW A1 CORNER Ø0. Ø0. Ø0.30±0.05(48X 1.875 A 0.75 3 ...

Page 11

... The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. Figure 10. 44-Pin TSOP II, 51-85087 ® CY62147EV30 MoBL 51-85087-*A Page [+] Feedback ...

Page 12

... Changed from Preliminary information to Final Changed the address of Cypress Semiconductor Corporation on Page #1 from “3901 North First Street” to “198 Champion Court” Removed 35ns Speed Bin Removed “L” version of CY62147EV30 Changed ball E3 from DNU to NC. Removed redundant foot note on DNU. Changed I (Max) value from ...

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