lh28f004su-z9 Sharp Microelectronics of the Americas, lh28f004su-z9 Datasheet

lh28f004su-z9

Manufacturer Part Number

lh28f004su-z9

Description

Flash Memory

Manufacturer

Sharp Microelectronics of the Americas

Datasheet

1.LH28F004SU-Z9.pdf (31 pages)

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LH28F004SU-Z9

FEATURES

•

512K × 8 Word Configuration

2.7 V Write/Erase Operation (5 V ± 0.5 V

– No Requirement For DC/DC Converter

150 ns Maximum Access Time

Minimum 2.7 V Read Capability

– 190 ns Maximum Access Time

– 180 ns Maximum Access Time

32 Independently Lockable Blocks (16K)

100,000 Erase Cycles per Block

Automated Byte Write/Block Erase

– Command User Interface

– Status Register

– RY

System Performance Enhancement

– Erase Suspend For Read

– Two-Byte Write

– Full Chip Erase

Data Protection

– Hardware Erase/Write Lockout During

– Software Erase/Write Lockout

Independently Lockable For Write/Erase

On Each Block (Lock Block and Protect

Set/Reset)

4 µA (Typ.) I

0.2 µA (Typ.) Deep Power-Down

State-of-the-Art 0.45 µm ETOX™

Flash Technology

Extended Temperature Operation

– -20°C to +85°C (Read)

– +15°C to +35°C (Write/Erase)

42-pin, 0.67 mm × 8 mm × 8 mm

CSP Package

To Write/Erase

Power Transitions

, 3.0 V ± 0.3 V V

= 3.3 V ± 0.3 V)

/ BY

= 2.7 V, -20°C to +85°C)

= 2.7 V, 0°C to +70°C)

Status Output

In CMOS Standby

, +15°C to +35°C)

INTRODUCTION

tionary architecture which enables the design of truly

mobile, high performance, personal computing and

communication products. With innovative capabilities,

3.3 V low power operation and very high read/write

performance, the LH28F004SU is also the ideal choice

for designing embedded mass storage flash memory

systems.

metrical blocked architecture (16K each) extended

cycling, low power operation, very fast write and read

performance and selective block locking provide a highly

flexible memory component suitable for cellular phone,

facsimile, game, PC, printer and handy terminal. The

LH28F004SU’s 5.0 V/3.3 V power supply operation

enables the design of memory cards which can be read

in 3.3 V system and written in 5.0 V/3.3 V systems. Its

x8 architecture allows the optimization of memory to

processor interface. The flexible block locking option

enables bundling of executable application software in

a Resident Flash Array or memory card. Manufactured

on Sharp’s 0.45 µm ETOX™ process technology, the

LH28F004SU is the most cost-effective, high-density

3.3 V flash memory.

42-PIN CSP

Sharp’s LH28F004SU 4M Flash Memory is a revolu-

The LH28F004SU’s independently lockable 32 sym-

GND

Figure 1. CSP Configuration

4M (512 × 8) Flash Memory

RY/BY

GND

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28F004SU-Z9-1

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