w29ee011 Winbond Electronics Corp America, w29ee011 Datasheet - Page 9

• Manufacturer Part Number: w29ee011
• Description: 128k X 8 Cmos Flash Memory
• Manufacturer: Winbond Electronics Corp America

DC CHARACTERISTICS
Absolute Maximum Ratings
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability
Operating Characteristics
(V
Power-up Timing
Power Supply Current
Standby V
Current (TTL input)
Standby V
(CMOS input)
Input Leakage Current
Output Leakage
Current
Input Low Voltage
Input High Voltage
Output Low Voltage
Output High Voltage
Power Supply Voltage to V
Operating Temperature
Storage Temperature
D.C. Voltage on Any Pin to Ground Potential except OE
Transient Voltage (< 20 nS ) on Any Pin to Ground Potential
Voltage on OE Pin to Ground Potential
Power-up to Read Operation
Power-up to Write Operation
DD
= 5.0V 10 , V
of the device.
PARAMETER
DD
DD
Current
PARAMETER
SS
= 0V, T
A
SYM.
= 0 to 70 C)
I
I
V
V
PARAMETER
I
V
SB
SB
I
V
CC
I
LO
OH
OL
LI
ss
IH
IL
1 CE = V
2 CE = V
Potential
all I/Os open
Address inputs = V
at f = 5 MHz
Other inputs = V
Other inputs = V
V
V
I
I
CE = OE = V
OL
OH
IN
IN
= 2.1 mA
= GND to V
= GND to V
= -0.4 mA
TEST CONDITIONS
IH
DD
, all I/Os open
-0.3V, all I/Os open
T
IL
T
PU
, WE = V
DD
DD
PU
-
-
- 9 -
IL
DD
SYMBOL
.WRITE
/V
.READ
IL
-0.3V/GND
IH
/V
IH
,
IH
,
MIN.
-0.3
Publication Release Date: July 1999
TYPICAL
2.0
2.4
-0.5 to V
-1.0 to V
-
-
-
-
-
-
100
-0.5 to +7.0
-65 to +150
-0.5 to 12.5
RATING
5
0 to +70
LIMITS
TYP.
20
DD
DD
2
-
-
-
-
-
-
-
+1.0
+1.0
W29EE011
MAX.
+0.5
V
0.45
100
0.8
50
10
3
1
DD
-
UNIT
Revision A12
mS
S
UNIT
V
V
V
V
C
C
UNIT
mA
mA
V
V
V
V
A
A
A