hm6216255h Renesas Electronics Corporation., hm6216255h Datasheet

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hm6216255h

Manufacturer Part Number
hm6216255h
Description
4m High Speed Sram 256-kword X 16-bit -
Manufacturer
Renesas Electronics Corporation.
Datasheet

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Description
The HM6216255H Series is a 4-Mbit high speed static RAM organized 256-k word
high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high
speed circuit designing technology. It is most appropriate for the application which requires high speed, high
density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged
in 400-mil 44-pin plastic SOJ and 400-mil 44-pin plastic TSOPII.
Features
Single 5.0 Vsupply : 5.0 V 10 %
Access time: 10/12/15 ns (max)
Completely static memory
Equal access and cycle times
Directly TTL compatible
Operating current: 200/180/160 mA (max)
TTL standby current: 70/60/50 mA (max)
CMOS standby current: 5 mA (max)
Data retansion current: 0.8 mA (max) (L-version)
Data retantion voltage: 2 V (min) (L-version)
Center V
No clock or timing strobe required
All inputs and outputs
CC
and V
4M high Speed SRAM (256-kword
SS
type pinout
: 1.2 mA (max) (L-version)
HM6216255H Series
16-bit)
ADE-203-763D (Z)
16-bit. It has realized
Sep. 15, 1998
Rev. 1.0

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hm6216255h Summary of contents

Page 1

... Speed SRAM (256-kword Description The HM6216255H Series is a 4-Mbit high speed static RAM organized 256-k word high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system ...

Page 2

... HM6216255H Series Ordering Information Type No. HM6216255HJP-10 HM6216255HJP-12 HM6216255HJP-15 HM6216255HLJP-10 HM6216255HLJP-12 HM6216255HLJP-15 HM6216255HTT-10 HM6216255HTT-12 HM6216255HTT-15 HM6216255HLTT-10 HM6216255HLTT-12 HM6216255HLTT-15 Pin Arrangement HM6216255HJP/HLJP Series ...

Page 3

... A6 A5 (MSB Input I/O8 data control I/ I/O16 HM6216255H Series Pin name Function UB Upper byte select LB Lower byte select V Power supply CC V Ground connection Memory matrix 256 rows 8 columns 128 blocks 16 bit (4,194,304 bits) Column I/O Column decoder A10 A8 A9 A12 A13 A14 A0 A15 A3 A4 ...

Page 4

... HM6216255H Series Operation Table Mode H Standby Output disable Read Lower byte read Upper byte read — Write Lower byte write Upper byte write I ...

Page 5

... CC — — — — — — — 0.1 5 SB1 —* 0.1* 1.2 * — — 0.4 OL 2.4 — — OH HM6216255H Series Max Unit Unit Test conditions A Vin = Vin = Iout = Other inputs = V ...

Page 6

... HM6216255H Series Capacitance ( 1.0 MHz) Parameter Symbol 1 Input capacitance* Cin 1 Input/output capacitance* C I/O Note: 1. This parameter is sampled and not 100% tested. 6 Min Typ Max Unit — — — — Test conditions Vin = I/O ...

Page 7

... OLZ — 0 — LBLZ UBLZ t — 5 — 6 CHZ t — 5 — 6 OHZ — 5 — 6 LBHZ UBHZ HM6216255H Series 480 UBLZ CHZ OHZ , and -15 Min Max Unit Notes 15 — ns — — — — — ...

Page 8

... HM6216255H Series Write Cycle Parameter Write cycle time Address valid to end of write Chip select to end of write Write pulse width Byte select to end of write Address setup time Write recovery time Data to write time overlap Data hold from write time Write disable to output in low-Z ...

Page 9

... High Impedance Dout (Lower byte) High Impedance Dout (Upper byte Valid address ACS LBLZ UBLZ OLZ CLZ 4 * HM6216255H Series CHZ OHZ LBHZ UBHZ 4 * Valid data Valid data 9 ...

Page 10

... HM6216255H Series Read Timing Waveform (2) ( Address CS OE High Impedance Dout (Lower/Upper byte UB Valid address ACS OLZ CLZ 4 * Valid data CHZ OHZ 4 * ...

Page 11

... Dout (Lower byte) Dout (Upper byte) Din (Lower byte) Din (Upper byte Valid address LBW t UBW t WHZ t OHZ High impedance High impedance t DW Valid data t DW Valid data HM6216255H Series OLZ ...

Page 12

... HM6216255H Series Write Timing Waveform (2) (WE Controlled) Address WE* CS LB, UB Dout (Lower/Upper byte) Din (Lower/Upper byte Valid address UBW LBW t WHZ t OHZ High impedance Valid data OLZ ...

Page 13

... Write Timing Waveform (3) (CS Controlled) Address LB, UB Dout (Lower/Upper byte) Din (Lower/Upper byte Valid address LBW UBW t WHZ t OHZ High impedance Valid data HM6216255H Series OLZ ...

Page 14

... HM6216255H Series Low V Data Retention Characteristics ( + This characteristics is guaranteed only for L-version. Parameter V for data retention CC Data retention current Chip deselect to data retention time Operation recovery time Note: 1. Typical values are Low V Data Retention Timing Waveform CC t CDR ...

Page 15

... Package Dimensions HM6216255HJP/HLJP Series (CP-44D) 28.33 28.90 Max 44 1 0.74 1.30 Max 0.43 0.10 0.41 0.08 Dimension including the plating thickness Base material dimension 23 22 1.27 0.10 Hitachi Code JEDEC EIAJ Weight (reference value) HM6216255H Series Unit: mm 9.40 0.25 CP-44D Conforms — 1 ...

Page 16

... HM6216255H Series HM6216255HTT/HLTT Series (TTP-44DE) 18.41 18.81 Max 44 1 0.80 0.27 0.07 0.13 M 0.25 0.05 1.005 Max 0.10 Dimension including the plating thickness Base material dimension 11.76 0.20 0 – 5 Hitachi Code JEDEC EIAJ Weight (reference value) Unit: mm 0.80 0.50 0.10 TTP-44DE — — 0.43 g ...

Page 17

... Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 HM6216255H Series Hitachi Asia Pte. Ltd. Hitachi Asia (Hong Kong) Ltd. 16 Collyer Quay #20-00 Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Hitachi Tower ...

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