s-8211das-m5t1g Seiko Instruments Inc., s-8211das-m5t1g Datasheet - Page 23

• Manufacturer Part Number: s-8211das-m5t1g
• Description: Battery Protection Ic For 1-cell Pack
• Manufacturer: Seiko Instruments Inc.

*1. If the threshold voltage of an FET is low, the FET may not cut the charging current. If an FET with a threshold voltage
*2. If the withstanding voltage between the gate and source is lower than the charger voltage, the FET may be destroyed.
*3. If R1 has a high resistance, the voltage between VDD pin and VSS pin may exceed the absolute maximum rating when a
*4. If a capacitor of less than 0.022 µF is connected to C1, DO pin may oscillate when load short-circuiting is detected. Be
*5. If R2 has a resistance higher than 4 kΩ, the charging current may not be cut when a high-voltage charger is connected.
Caution
Symbol
Rev.4.6
FET1
FET2
R1
C1
R2
Battery Protection IC Connection Example
equal to or higher than the overdischarge detection voltage is used, discharging may be stopped before overdischarge is
detected.
charger is connected in reverse since the current flows from the charger to the IC. Insert a resistor of 100 Ω or higher as
R1 for ESD protection.
sure to connect a capacitor of 0.022 µF or higher to C1.
N-channel
MOS FET
N-channel
MOS FET
Resistor
Capacitor
Resistor
_00
1. The above constants may be changed without notice.
2. It has not been confirmed whether the operation is normal or not in circuits other than the above
Part
example of connection. In addition, the example of connection shown above and the constant do not
guarantee proper operation. Perform through evaluation using the actual application to set the
constant.
Discharge control
Charge control
ESD protection,
For power fluctuation
For power fluctuation
Protection for reverse
connection of a charger
Purpose
Battery
R1
Table 12 Constants for External Components
C1
VDD
VSS
0.1 µF
220 Ω
2 kΩ
Seiko Instruments Inc.
Typ.


DO
FET1
S-8211D Series
BATTERY PROTECTION IC FOR 1-CELL PACK
Figure 15
0.022 µF
100 Ω
300 Ω
Min.
CO


FET2
1.0 µF
330 Ω
Max.
4 kΩ


VM
R2
Threshold voltage ≤ Overdischarge detection
voltage
Gate to source withstanding voltage ≥
Charger voltage
Threshold voltage ≤ Overdischarge detection
voltage
Gate to source withstanding voltage ≥
Charger voltage
Resistance should be as small as possible to
avoid lowering the overcharge detection
accuracy due to current consumption.
Connect a capacitor of 0.022 µF or higher
between VDD pin and VSS pin.
Select as large a resistance as possible to
prevent current when a charger is connected
in reverse.
*1
*1
*5
EB+
EB−
*2
*2
Remark
S-8211D Series
*4
*3
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